# US 5,347,161 A · Stacked-layer structure polysilicon emitter contacted p-n junction diode

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- Number: US 5,347,161 A
- Document ID: US5347161A
- Status: Granted
- Kind: A
- Application number: 07/939,244
- Filed: 1992-09-02
- Granted: 1994-09-13
- Earliest claimed: 1992-09-02
- Assignees: National Science Council
- Inventors: Shye-Lin Wu; Chung-Len Lee; Tan-Fu Lei
- Web page: https://patentgrep.com/patent/US5347161A

## CPC

- H10D 8/043: {of planar diodes}
- H10D 8/411: {PN diodes having planar bodies}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10P 32/1414: {the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon}
- H10P 32/171: {being group IV material}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A process is used to fabricate diodes having an emitter contacted p-n junction. A stack of n.sup.+ -type polysilicon layers are formed one upon the other upon a p-type silicon substrate. In an accordingly fabricated diode, native oxide layers that forms between the n.sup.+ -type polysilicon layer and the p-type substrate would be liable to be broken up, and thicker epitaxial layer would be formed between the same. The p-n junction is with a thickness of 0.05-0.2 .mu.m. As the diode is reverse-biased, for example at -5V, leakage current could be less than 1 n.ANG./cm.sup.2. The reverse-bias breakdown voltage could be larger than -100 V. When forward-biased, the ideality factor of the diode is close to unity.

## Claims

### Claim 1

A p-n junction diode, comprising:
(a) a substrate of p-type semiconductor;
(b) a stack of at least two layers of N.sup.+ -type polysilicon formed upon said substrate; and
(c) an electrode disposed over said stack of at least two n.sup.+ -type polysilicon layers;
wherein each of said n.sup.+ -type polysilicon layers has a thickness in the range from 500 .ANG. to 1000 .ANG. and a donor concentration of at least 10.sup.20 cm.sup.-3.

### Claim 2

A p-n junction diode, comprising:
(a) a substrate of p-type semiconductor;
(b) a stack of at least three layers of n.sup.+ -type polysilicon formed upon said substrate; and
(c) an electrode disposed over said stack of at least three n.sup.+ -type polysilicon layers

### Claim 3

A p-n junction diode, comprising:
(a) a substrate of n-type semiconductor;
(b) a stack of at least two layers of p.sup.+ -type polysilicon formed upon said substrate; and
(c) an electrode disposed over said stack of at least two p.sup.+ -type polysilicon layers;
wherein each of said p.sup.+ -type polysilicon layers has a thickness in the range from 500 .ANG. to 1000 .ANG. and a donor concentration of at least 10.sup.20 cm.sup.-3.

### Claim 4

A p-n junction diode, comprising:
(a) a substrate of n-type semiconductor;
(b) a stack of at least three layers of p.sup.+ -type polysilicon formed upon said substrate; and
(c) an electrode disposed over said stack of at least three p.sup.+ -type polysilicon layers