# US 5,347,152 A · Stacked CMOS latch with cross-coupled capacitors

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- Number: US 5,347,152 A
- Document ID: US5347152A
- Status: Granted
- Kind: A
- Application number: 08/156,992
- Filed: 1993-11-23
- Granted: 1994-09-13
- Earliest claimed: 1989-06-30
- Assignees: Texas Instruments Incorporated
- Inventors: Ravishankar Sundaresan
- Web page: https://patentgrep.com/patent/US5347152A

## CPC

- H10B 10/12: {comprising a MOSFET load element}
- H10B 10/125: {the MOSFET being a thin film transistor [TFT]}
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A latch (80) utilizing stacked MOS technology is provided. Latch (80) is formed generally in relation to a semiconductor substrate (82). An N channel transistor is provided with first and second diffused regions (96 98) and a gate conductor (86) . A P channel transistor is provided with first and second doped regions (106, 110) having a channel region (108) therebetween. The second diffused region (98) of the N channel transistor also functions as the gate conductor for the P channel transistor. A capacitive element exists by having an insulating layer (84) or layers (84, 100) between first doped region (104) and second diffused region (98).

## Claims

### Claim 1

A SRAM comprising:
a bulk transisitor having a gate;
a stacked transistor having a gate and first and second source/drain regions; and
a discrete first capacitor plate located between said gate of said bulk transistor and said first source/drain region of said stacked transistor;
wherein said gate of said stacked transistor comprises a first diffused region, said first diffused region also forming a first source/drain region of said bulk transistor and a second capacitor plate.

### Claim 2 (depends on 1)

The SRAM of claim 1, wherein said bulk transistor is of a first conductivity type and said stacked transistor is of a second conductivity type opposite said first conductivity type.

### Claim 3 (depends on 2)

The SRAM of claim 2, wherein said first and second capacitor plates comprises said first conductivity type.

### Claim 4 (depends on 1)

The SRAM of claim 1, wherein said bulk transistor is located in a semiconductor substrate and further comprises:
a second diffused region located within said semiconductor substrate; and
a first insulator layer located between said gate of said bulk transistor and said semiconductor substrate.

### Claim 5 (depends on 4)

The SRAM of claim 4, wherein said first insulator layer is also located between said first and second capacitor plates.

### Claim 6 (depends on 5)

The SRAM of claim 5 further comprising a second insulator layer located between said first capacitor plate and said first insulator layer.

### Claim 7 (depends on 6)

The SRAM of claim 6, wherein said first and second insulator layers are also located between said gate of said stacked transistor and said first and second source/drain regions of said stacked transistor.

### Claim 8 (depends on 4)

The SRAM of claim 4, further comprising first and second lightly doped regions located adjacent said first and second diffused regions, said first and second lightly doped regions being self-aligned to said gate of said bulk transistor.

### Claim 9 (depends on 1)

The SRAM of claim 1, wherein said first and second source/drain regions of said stacked transistor comprises a semiconductor layer separated from said first diffused region by an insulator layer, said semiconductor layer also comprising a channel region located between said first and second source/drain regions of said stacked transistor.

### Claim 10 (depends on 9)

The SRAM of claim 9, wherein said channel region and said first and second source/drain regions of said stacked transistor comprise a first conductivity type dopant.