US 5,347,144 A · Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials

Abstract

A thin-layer field-effect transistor (TFT) with an MIS structure includes a thin semiconductor layer between a source and a drain. The thin semiconductor layer is in contact with one surface of a thin layer made of insulating material, and in contact by its other surface with a conducting grid. The semiconductor is composed of at least one polyconjugated organic compound with a specific molecular weight. The polyconjugated organic compound or polyconjugated organic compounds contain at least 8 conjugated bonds and have a molecular weight of no greater than approximately 2,000. The thin layer of insulating material is made of an insulating organic polymer having a dielectric constant of at least equal to 5. The transistor is useful as a switching or amplifying element.

Claims14

Dependent claims

A thin-layer field-effect transistor (TFT) with an MIS structure comprising a thin semiconductor layer between a source and a drain, said thin semiconductor layer being in contact with one surface of a thin layer made of insulating material, and said thin insulating layer being in contact by its other surface with a conducting grid, wherein said semiconductor is composed of at least one polyconjugated organic compound which contains at least 8 conjugated bonds and has a molecular weight of no greater than approximately 2,000, and wherein said thin layer of insulating material comprises an insulating organic polymer having a dielectric constant at least equal to 5.

Dependencies are inferred from the claim text.

Facts

Application

07/966,048Filed 1 Mar 1993

Priority

FR 90 084884 Jul 1990

Granted

13 Sep 1994

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10K 10/46
Organic transistors: field-effect transistors, e.g. organic thin-film transistors [OTFT]
H10D 30/6739
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
H10D 64/68
Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes: characterised by the insulator, e.g.…
H10K 85/111
Organic polymers or oligomers: comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene

Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials

Life of this patent

Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials

Life of this patent

Abstract

Claims14