# US 5,347,140 A · Resonant electron transfer device

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- Number: US 5,347,140 A
- Document ID: US5347140A
- Status: Granted
- Kind: A
- Application number: 07/935,988
- Filed: 1992-08-27
- Granted: 1994-09-13
- Earliest claimed: 1991-08-27
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Yoshihiko Hirai; Kiyoshi Morimoto; Yasuaki Terui; Atsuo Wada; Kenji Okada; Juro Yasui; Masaaki Niwa
- Web page: https://patentgrep.com/patent/US5347140A

## CPC

- H10D 44/45: having field effect produced by insulated gate electrodes
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

## Claims

### Claim 1

A resonant electron transfer device comprising:
a plurality of one-dimensional quantum wires each having a quantum well elongated in one direction;
a plurality of zero-dimensional quantum dots each having a quantum well whose lowest quantum energy level is higher than that of said quantum wire of said one-dimensional quantum wire; and
a plurality of electrodes formed on said quantum wires and quantum dots for controlling internal potentials of respective quantum wires and quantum dots;
wherein said plurality of quantum wires and quantum dots are arranged alternately so as to form a predetermined connection structure;
wherein one of said quantum wires and an adjacent one of said quantum dots are connected via a potential barrier capable of exhibiting a tunnel effect therebetween;
and wherein information is transmitted from one of said quantum wires to one of said quantum dots or vice versa in accordance with controlling voltages supplied to said plurality of electrodes.

### Claim 2 (depends on 1)

The resonant electron transfer device as claimed in claim 1, wherein said predetermined connection structure comprises a series connection of a plurality of units each comprised of one quantum wire and one quantum dot.

### Claim 3 (depends on 2)

The resonant electron transfer device as claimed in claim 2, wherein each of said plurality of units is commonly controlled by each one of said plurality of electrodes.

### Claim 4 (depends on 1)

The resonant electron transfer device as claimed in claim 1, wherein said plurality of electrodes comprises first and second groups and wherein each electrode of said first group controls the internal potential of each of said plurality of quantum wires and each electrode of said second group controls the internal potential of each of said plurality of quantum dots.

### Claim 5 (depends on 1)

The resonant electron transfer device as claimed in claim 1, wherein said predetermined connection includes a plurality of units each comprised of a pair of said one-dimensional wires arranged in parallel and one zero-dimensional quantum dot which is connected between said pair of said one-dimensional wires.

### Claim 6 (depends on 5)

The resonant electron transfer device as claimed in claim 5, wherein said plurality of electrodes includes a first electrode for controlling internal potentials of one of said one-dimensional quantum wires and said one zero-dimensional quantum dot of said unit and a second electrode for controlling internal potentials of another one-dimensional quantum wire and the same zero-dimensional quantum dot of the same unit.