# US 5,346,882 A · Josephson contacts in high temperature superconductors and method of fabrication thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,346,882 A - Document ID: US5346882A - Status: Granted - Kind: A - Application number: 07/917,177 - Filed: 1992-07-20 - Granted: 1994-09-13 - Earliest claimed: 1991-07-19 - Inventors: Paul Muller - Web page: https://patentgrep.com/patent/US5346882A ## CPC - H10N 60/0941: {comprising high-Tc ceramic materials} - H10N 60/124: {comprising high-Tc ceramic materials} - Y10S 505/702: Josephson junction present - Y10S 505/703: Microelectronic device with superconducting conduction line - Y10S 505/729: Growing single crystal, e.g. epitaxy, bulk - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract Josephson contacts are fabricated in ceramic compounds from classes of high temperature superconductors. The succession of layers in the single-crystal determines the properties of the Josephson contacts. The supercurrent flows in the direction of the crystallographic c-axis. In a category of substances of high temperature superconductors the Josephson contacts are located in the space between each of two copper oxide planes. In a different class of high temperature superconductors the Josephson contacts are located between each of two single copper oxide planes. The electrical properties such as critical supercurrent density, capacitance and shunt resistance or the Josephson contacts are adjusted by controlled addition or controlled withdrawal of oxygen. Using stacks of such intrinsic Josephson contacts within a single-crystal, current-controllable high frequency generators, Josephson voltage normals and SQUIDS can be realized. ## Claims ### Claim 1 Method for fabricating high temperature superconductors, which, after the following fabrication steps, form at least one intrinsic Josephson junction: a small single-crystal, the dimensions of which are below the penetration depth of the magnetic field perpendicular to the crystallographic c-axis, is drawn from the melt of a high temperature superconductor or deposited epitaxially on a substrate; the single-crystal is fabricated or post-processed in an inert atmosphere of in a vacuum at controlled oxygen partial pressure; at the boundaries parallel to the superconducting layers of the single-crystal well-conducting contacts are vapor-deposited; and the single-crystal is cooled below its superconducting transition temperature. ### Claim 2 (depends on 1) A method according to claim 1, characterized in that several Josephson junctions form a densely-packed pile in the single-crystal. ### Claim 3 (depends on 1) A method according to claim 1, characterized in that the ceramic superconductor consists of Bi.sub.2 Sr.sub.2 Ca Cu.sub.2 O.sub.8. ### Claim 4 (depends on 1) A method according to claim 1, characterized in that the ceramic conductor has been selected from the class ##EQU4## ### Claim 5 (depends on 1) A method according to claim 1, characterized in that the ceramic superconductor consists of T1 Ba.sub.2 Cu O.sub.5 or of another ceramic of a class with simple copper oxide planes. ### Claim 6 (depends on 1) A method according to claim 1, characterized by a small single-crystal plate or a monocrystalline layer with a thickness roughly between 100 .ANG. and 10 .mu.m. ### Claim 7 (depends on 1) A method according to claim 1, characterized by dimensions in the direction of the layers, which are less than 100 .mu.m.times.100 .mu.m. ### Claim 8 (depends on 7) A method according to claim 7, characterized by a small single-crystal plate of roughly 30 .mu.m.times.30 .mu.m in the direction of the layers. ### Claim 9 (depends on 1) A method according to claim 1, characterized by argon, helium or nitrogen as an inert gas. ### Claim 10 (depends on 1) A method according to claim 1, characterized in that the controlled oxygen partial pressure is between zero and several hundred bars. ### Claim 11 (depends on 1) A method according to claim 1, characterized by tempering in an argon atmosphere for post-processing. ### Claim 12 (depends on 11) A method according to claim 11, characterized by tempering at roughly 700.degree. C. or lower temperatures. ### Claim 13 (depends on 1) A method according to claim 1, characterized by gold contacts at the boundaries. ### Claim 14 (depends on 1) A method according to claim 1, characterized by contact resistances of less than 10.sup.-4 Ohm cm.sup.2. ### Claim 15 Method for fabricating high temperature superconductors, which, after the following fabrication steps, form at least one intrinsic Josephson junction: a small, single-crystal, the dimensions of which are below the penetration depth of the magnetic field perpendicular to the crystallographic c-axis, is drawn from a melt of a high temperature superconductor or deposited epitaxially on a substrate; the single-crystal is fabricated or post-processed in an inert atmosphere or in a vacuum at controlled oxygen partial pressure for modifying regions between superconducting layers, planes or double planes, of the small single-crystal; at the boundaries parallel to the superconducting layers of the small single-crystal, well conducting contacts are vapor deposited. ### Claim 16 Method for fabricating high temperature superconductors, which, after the following fabrication steps, form at least one intrinsic Josephson junction; a small single-crystal, the dimensions of which are below the penetration depth of the magnetic field perpendicular to the crystallographic c-axis, is drawn from a melt of a high temperature superconductor or deposited epitaxially on a substrate; the metal-1-component of the superconducting material comprises one or more metallic elements of the 3, 4, or 5, main group; the single-crystal is fabricated or post-processed in an inert atmosphere or in a vacuum at controlled oxygen partial pressure for modifying regions between superconducting layers, planes or double planes of the small single-crystal; at the boundaries parallel to the superconducting layers of the small single-crystal, well conducting contacts are vapor-deposited. ### Claim 17 A monocrystalline high temperature superconductor plate, forming an intrinsic Josephson junction, having superconducting planes, arranged in layers, wherein the spacing of adjacent superconducting layers or double layers is roughly 10 times as large as the superconducting Ginzburg-Landau coherence length in the direction of this spacing, and wherein the monocrystalline plate, or the layers of the plate, have dimensions in the direction of the superconducting planes not larger than the penetration depth of an external magnetic field parallel to the planes, formed by a process comprising the steps of: a small single-crystal, the dimensions of which are below the penetration depth of the magnetic field perpendicular to the crystallographic c-axis, is drawn from a melt of a high temperature superconductor or deposited epitaxially on a substrate; the single-crystal is fabricated or post-processed in an inert atmosphere or in a vacuum at controlled oxygen partial pressure for modifying regions between superconducting layers, planes or double planes, of the small single-crystal; at the boundaries parallel to the superconducting layers of the small single-crystal, well conducting contacts are vapor deposited.