# US 5,346,852 A · Low temperature process for producing indium-containing semiconductor materials

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- Number: US 5,346,852 A
- Document ID: US5346852A
- Status: Granted
- Kind: A
- Application number: 08/027,314
- Filed: 1993-02-25
- Granted: 1994-09-13
- Earliest claimed: 1993-02-25
- Assignees: The United States of America as represented by the Secretary of the Navy
- Inventors: Robert W. Gedridge, Jr.
- Web page: https://patentgrep.com/patent/US5346852A

## CPC

- C30B 25/02: Epitaxial-layer growth
- C23C 16/301: {AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- C30B 29/40: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- Y10S 148/065: Gp III-V generic compounds-processing
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH.sub.3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.

## Claims

### Claim 1

In a process of forming an indium-containing semiconductor material by chemical vapor deposition the improvement comprising using triisopropylindium as a source of indium for film growth temperatures between 100.degree. C. to less than or equal to 250.degree. C.

### Claim 2 (depends on 1)

The process of claim 1, including employing one or more sources of a Group V material, to produce a III/V indium-containing semiconductor material.

### Claim 3 (depends on 2)

The process of claim 2, wherein said one or more sources of said Group V material is a compound containing an element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth.

### Claim 4 (depends on 3)

The process of claim 3, wherein said III/V indium-containing semiconductor material is selected from .the group consisting of binary, ternary and quaternary III/V indium-containing semiconductor materials.

### Claim 5 (depends on 2)

The process of claim 2, employing arsine as a source of a Group V material, to produce an indium and arsenic-containing semiconductor material.

### Claim 6

A process for forming III/V indium-containing semiconductor materials which comprises reacting triisopropylindium and one or more sources of a group V material by chemical vapor deposition at temperatures between 100.degree. C. to less than or equal to 250.degree. C. and depositing a III/V semiconductor material without substantial unintentional impurity incorporation.

### Claim 7 (depends on 6)

The process of claim 6, wherein said one or more sources of said Group V material is a compound containing an element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth.

### Claim 8 (depends on 7)

The process of claim 7, wherein said III/V indium-containing semiconductor material is selected from the group consisting of binary, ternary and quaternary III/V indium-containing semiconductor materials.

### Claim 9 (depends on 6)

The process of claim 6, the reaction taking place from ambient pressure to low pressure down to 10.sup.-9 torr.

### Claim 10 (depends on 6)

The process of claim 6, said source of a Group V material being arsine, and depositing the semiconductor InAs.

### Claim 11 (depends on 6)

The process of claim 6, including depositing said III/V semiconductor material on a semiconductor substrate.

### Claim 12

A process for forming III/V indium-containing semiconductor materials which comprises providing a carrier gas containing triisopropylindium and providing a carrier gas containing a source of a group V material, providing a reactor for chemical vapor deposition containing a substrate heated to between 100.degree. C. to less than or equal to 250.degree. C., passing said carrier gas containing triisopropylindium into said reactor, passing said carrier gas containing said source of a group V material into said reactor, heating said gases at said temperatures, and depositing an indium-containing III/V semiconductor on said substrate, said semiconductor being substantially free of unintentional impurities.

### Claim 13 (depends on 12)

The process of claim 12, said substrate being a semiconductor.

### Claim 14 (depends on 12)

The process of claim 12, wherein the pressure in said reactor ranges from ambient pressure to low pressure down to about 10.sup.-9 torr.

### Claim 15 (depends on 12)

The process of claim 12, said substrate being heated to about atmospheric pressure.

### Claim 16 (depends on 12)

The process of claim 12, said source of a Group V material being arsine.

### Claim 17 (depends on 16)

The process of claim 16, said reactor being maintained at about ambient pressure, and employing a substantial excess of arsine in relation to triisopropylindium.