# US 5,346,730 A · Process for depositing a copper containing layer I > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,346,730 A - Document ID: US5346730A - Status: Granted - Kind: A - Application number: 07/735,514 - Filed: 1991-07-26 - Granted: 1994-09-13 - Earliest claimed: 1990-07-27 - Assignees: Kali-Chemie Aktiengesellschaft - Inventors: Thomas Kruck; Christian Terfloth - Web page: https://patentgrep.com/patent/US5346730A ## CPC - C07F 1/005: {without C-Metal linkages} - C07F 9/5045: {Complexes or chelates of phosphines with metallic compounds or metals} - C23C 16/18: from metallo-organic compounds - C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I) RO--Cu--L (I) in which R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, is described, together with previously unknown compounds of formula (I) which may be used in the process. ## Claims ### Claim 1 A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the gas or vapor phase and in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, whereby a copper-containing layer is applied to said substrate. ### Claim 2 (depends on 1) A process according to claim 1, wherein R represents a branched alkyl group with 3 to 5 carbon atoms or a branched alkyl group with 3 to 5 carbon atoms substituted by at least one fluorine atom. ### Claim 3 (depends on 2) A process according to claim 2, wherein R represents an i-propyl, i-butyl, t-butyl, neopentyl, 2-trifluoromethylpropyl, or perfluoro-t-butyl group. ### Claim 4 (depends on 1) A process according to claim 1, wherein R represents a benzyl, phenyl, tolyl, or mesityl group. ### Claim 5 (depends on 1) A process according to claim 1, wherein L represents t-butyl isonitrile, carbon monoxide, triphenylphosphane, tri(lower alkyl)phosphane, or trifluorophosphane. ### Claim 6 (depends on 5) A process according to claim 5, wherein L represents trimethylphosphane or triethylphosphane. ### Claim 7 (depends on 1) A process according to claim 1, wherein L represents a branched alkyl isonitrile with 3 to 5 carbon atoms in its alkyl chain, phenyl isonitrile, tolyl isonitrile, phenyl difluorophosphane, or t-butyl difluorophosphane. ### Claim 8 (depends on 1) A process according to claim 1, wherein said decomposing step is effected thermally or by applying radiant energy to said compound of formula (I). ### Claim 9 (depends on 8) A process according to claim 8, wherein said decomposing step is effected by applying laser radiation to said compound of formula (I). ### Claim 10 (depends on 8) A process according to claim 8, wherein said decomposing step is effected thermally by heating said substrate to a temperature above about 150.degree. C. ### Claim 11 (depends on 1) A process according to claim 1, wherein said compound of formula (I) is converted into the vapor phase and decomposed under reduced pressure. ### Claim 12 (depends on 11) A process according to claim 11, wherein said compound of formula (I) is converted to the vapor phase while entrained in a carrier gas. ### Claim 13 (depends on 1) A process according to claim 1, wherein said substrate is composed of an inorganic material selected from the group consisting of metals, semiconductors, ceramics, and glass phases. ### Claim 14 (depends on 1) A process according to claim 1, wherein said substrate is composed of an organic material selected from the group consisting of polyphenylene sulfide polymers, polyimide polymers, and carbon fibers. ### Claim 15 A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said decomposing step is effected under an inert gas atmosphere or a reducing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of metallic copper is deposited on said substrate. ### Claim 16 A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said decomposing step is effected in the presence of a reactive oxidizing or hydrolyzing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of copper oxide is deposited on said substrate. ### Claim 17 A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said compound of formula (I) and at least one compound of at least one metal other than copper are decomposed, thereby to deposit layers containing copper and at least one other metal on said substrate. ### Claim 18 (depends on 17) A process according to claim 17, wherein said compound of a metal other than copper is an aluminum compound. ### Claim 19 (depends on 17) A process according to claim 17, wherein a plurality of different layers are deposited successively. ### Claim 20 (depends on 17) A process according to claim 17, wherein said compound of formula I and said at least one compound of at least one metal other than copper are decomposed simultaneously to form a layer containing copper and at least one other metal. ### Claim 21 A compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane; with the exception of compounds in which R represents t-butyl, and L represents t-butyl isonitrile, carbon monoxide or triethylphosphane. ### Claim 22 (depends on 21) A compound according to claim 21, wherein R represents a branched alkyl group with 3 to 5 carbon atoms or a branched alkyl group with 3 to 5 carbon atoms substituted by at least one fluorine atom. ### Claim 23 (depends on 22) A compound according to claim 22, wherein R represents an i-propyl, i-butyl, t-butyl, neopentyl, 2-trifluoromethylpropyl, or perfluoro-t-butyl group. ### Claim 24 (depends on 21) A compound according to claim 21, wherein R represents a benzyl, phenyl, tolyl, or mesityl group. ### Claim 25 (depends on 21) A compound according to claim 21, wherein L represents t-butyl isonitrile, carbon monoxide, triphenylphosphane, tri(lower alkyl)phosphane, or trifluorophosphane. ### Claim 26 (depends on 25) A compound according to claim 25, wherein L represents trimethylphosphane or triethylphosphane. ### Claim 27 (depends on 21) A compound according to claim 21, wherein L represents a branched alkyl isonitrile with 3 to 5 carbon atoms in its alkyl chain, phenyl isonitrile, tolyl isonitrile, phenyl difluorophosphane, or t-butyl difluorophosphane. ### Claim 28 (depends on 21) A compound according to claim 21, selected from the group consisting of: t-butoxy-copper-t-butyl difluorophosphane, t-butoxy-copper-phenyl difluorophosphane, t-butoxy-copper-diethylaminodifluorophosphane, 2-trifluoromethylpropan-2-oxy-copper-t-butyl isonitrile, 2-trifluoromethylpropan-2-oxy-copper-trimethylphosphane, perfluoro-t-butoxy-copper-t-butyl isonitrile, and perfluoro-t-butoxy-copper-trimethylphosphane. ### Claim 29 2-trifluoromethylpropan-2-oxy-copper or perfluoro-t-butoxy-copper.