# US 5,346,584 A · Planarization process for IC trench isolation using oxidized polysilicon filler

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- Number: US 5,346,584 A
- Document ID: US5346584A
- Status: Granted
- Kind: A
- Application number: 08/098,164
- Filed: 1993-07-28
- Granted: 1994-09-13
- Earliest claimed: 1993-07-28
- Assignees: Digital Equipment Corporation
- Inventors: Andre I. Nasr; Steven S. Cooperman
- Web page: https://patentgrep.com/patent/US5346584A

## CPC

- H10W 10/40: Isolation regions comprising polycrystalline semiconductor materials
- H10W 10/041: {of isolation regions comprising polycrystalline semiconductor materials}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a method of planarizing the surface of a silicon wafer in integrated circuit manufacture where trench isolation techniques are employed. The trenches and active areas on a semiconductor substrate are conformally coated with a layer of silicon oxide. A layer of patterned polysilicon then is deposited on top of the oxide and etched to create filler blocks in depressions above the trenches. Next, the polysilicon is annealed to thereby fill the trenches with an expanded oxide block. The resulting relatively planar surface then is polished back to the nitride cap, to thereby produce a high degree of planarity across all trench and active area dimensions.

## Claims

### Claim 1

A method of planarizing a face of a semiconductor substrate comprising:
forming flat active area mesas and trenches on said face;
depositing a conformal coating of a dielectric material or a material converted to a dielectric material over said face, forming depressions above said trenches;
depositing a layer of silicon over the conformal coating;
patterning the silicon layer with a photoresist to form resist blocks in the depressions above said trenches;
etching said silicon to leave silicon segments remaining in the areas beneath the resist blocks;
annealing the silicon to convert said silicon to oxide;
polishing the face of the semiconductor substrate with dielectric filled trenches to the level of the tops of the active areas so as to produce a substantially planar surface.

### Claim 2 (depends on 1)

The method of claim 1 wherein said etching is controlled so as to leave silicon spacers along sidewalls of the depressions.

### Claim 3 (depends on 1)

The method of claim 1 wherein said forming comprises etching that is patterned to form active areas and trenches of varying widths.

### Claim 4 (depends on 1)

The method of claim 1 wherein said semiconductor substrate is silicon.

### Claim 5 (depends on 1)

The method of claim 1 wherein said conformal coating is selected from the group consisting of silicon, silicon oxide, silicon nitride, silicon implanted with nitrogen, and "tetraethylorthosilicate".

### Claim 6 (depends on 5)

The method of claim 5 wherein the dielectric material is a silicon oxide.

### Claim 7 (depends on 5)

The method of claim 5 wherein the dielectric material is tetraethylorthosilicate.

### Claim 8 (depends on 1)

The method of claim 1 wherein the dielectric material is deposited in a thickness so that the level of the top of the dielectric in the trenches is at about the same level as the top of the active area mesas.

### Claim 9 (depends on 8)

The method of claim 8 wherein the silicon layer is deposited in a layer having a thickness about half of the depth of the depressions above the trenches so that after annealing and expansion, the level of the top of the dielectric is about the same as the top of the dielectric coating on the active area mesas.

### Claim 10

A method of planarizing a face of a silicon substrate comprising:
etching said face to form flat active area mesas and trenches;
depositing a conformal coating of a silicon oxide over said face, in a thickness such that the level of the top of the oxide in the trenches is at about the same level as the top of the active area mesas, forming depressions above said trenches;
depositing a layer of polysilicon over the conformal oxide coating, said polysilicon having a thickness about half the depth of the depressions above said trenches;
patterning the polysilicon layer with a photoresist to form resist blocks in the depressions above said trenches;
etching said polysilicon to leave polysilicon segments remaining in the areas beneath the resist blocks;
annealing the polysilicon to convert said polysilicon to oxide;
polishing the face of the semiconductor substrate with oxide filled trenches to the level of the tops of the active areas so as to produce a substantially planar surface.