# US 5,346,582 A · Dry etching apparatus

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- Number: US 5,346,582 A
- Document ID: US5346582A
- Status: Granted
- Kind: A
- Application number: 08/051,694
- Filed: 1993-04-26
- Granted: 1994-09-13
- Earliest claimed: 1990-10-12
- Assignees: Seiko Epson Corporation
- Inventors: Masaharu Yachi
- Web page: https://patentgrep.com/patent/US5346582A

## CPC

- H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge}
- H01J 37/32963: {End-point detection}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Plasma light beams emitted from a plurality of monitoring areas on a wafer are introduced via windows and optical fibers, respectively, and detected by a detector. The detector determines etching end times of the respective monitoring areas. A calculating section calculates a maximum allowable etching end time based on the first-determined etching end time and a predetermined uniformity standard. If the etching ends of all the monitoring areas have not been determined at the time point of the calculated maximum allowable etching end time, a controller immediately stops the etching process.

## Claims

### Claim 1

A dry etching method in which gas introduced into a chamber is ionized to become plasma to etch a layer formed on a semiconductor wafer, comprising the following steps:
providing a plurality of monitoring areas on the wafer;
detecting the intensity of light beams emanating from said plurality of monitoring areas, the intensity of said light beams representing a thickness of the layer at the respective monitoring areas;
determining etching end times of the respective monitoring areas based on the detected intensity of said light beams;
calculating etching parameters including a uniformity of etching rate in said monitoring areas based on the determined etching end times and a thickness of said layer; and
controlling an etching process based on the calculated etching parameters so that subsequent wafers are etched within said uniformity of etching rate.

### Claim 2 (depends on 1)

The method according to claim 1, wherein said calculating step comprises the step of calculating a maximum allowable etching end time based on a first etching end time which is first detected and a given uniformity standard and wherein said controlling step comprises the step of immediately stopping the etching process if the detecting step has not detected the etching end times of all the monitoring areas at the time point of the maximum allowable end time.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the light beams are plasma light beams emitted from etching reaction products.