# US 5,345,462 A · Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity

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- Number: US 5,345,462 A
- Document ID: US5345462A
- Status: Granted
- Kind: A
- Application number: 08/037,867
- Filed: 1993-03-29
- Granted: 1994-09-06
- Earliest claimed: 1993-03-29
- Assignees: AT&T Bell Laboratories
- Inventors: Kent D. Choquette
- Web page: https://patentgrep.com/patent/US5345462A

## CPC

- H01S 5/1835: {Non-circular mesa}
- H01S 5/0264: {for monitoring the laser-output}
- H01S 5/06236: {controlling the polarisation, e.g. TM/TE polarisation switching}
- H01S 5/18308: {having a special structure for lateral current or light confinement}
- H01S 5/18355: {having a defined polarisation}
- H01S 5/2063: {obtained by particle bombardment}
- H01S 5/423: {having a vertical cavity}
- H01S 2301/14: Semiconductor lasers with special structural design for lasing in a specific polarisation mode
- H01S 2301/166: Single transverse or lateral mode
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross section to regions have a length-to-width ratio in excess of 1.2 favors emission with polarization in the long dimension at the fundamental mode. A cruciform structure favors emission with switchable orthogonal polarization. The transverse shape can be configured by dry etching a particular cavity shape in index guided lasers or by forming a shaped ion implantation region around gain guided lasers.

## Claims

### Claim 1

In a semiconductor vertical cavity laser of the type comprising a transversely configured active region longitudinally sandwiched between a pair of reflecting layers, said active region having a transverse cross section with a center, the improvement wherein said transversely configured active region has a major dimension constituting the longest line segment in said region passing through said center and a minor dimension constituting the longest line segment perpendicular to said major dimension in said region, said major dimension exceeding said minor dimension by a factor of 1.2 or more.

### Claim 2 (depends on 1)

A laser according to claim 1 wherein said active region has a rhomboidal shape having an associated pair of diagonals with said major dimension along one diagonal and said minor dimension along the other diagonal.

### Claim 3 (depends on 1)

A laser according to claim 1 wherein said active region has a dumbell shape comprising two intersecting circles with said major dimension along the line between the centers of said circles and said minor dimension along a diameter of one of said circles.

### Claim 4 (depends on 1)

A laser according to claim 1 comprising a pair of configured active regions intersecting in a cruciform shape.

### Claim 5

A polarization switching semiconductor vertical cavity laser comprising a semiconductor active region longitudinally sandwiched between a pair of reflecting layers, said semiconductor active region transversely configured into a plurality of intersecting regions, each said region having a transverse cross section with a center and each said region having a major dimension constituting the longest line segment in said region passing through said center and a minor dimension constituting the longest line segment perpendicular to said major dimension in said region, said major dimension exceeding said minor dimension by a factor of 1.2 or more, and each said region having separate electrode means.

### Claim 6 (depends on 1, 2, 3, 4, 5)

A laser according to claim 1 or 2 or 3 or 4 or 5 further comprising a photodiode extending peripherally around said active region.