# US 5,345,194 A · FET having two gate bonding pads for use in high frequency oscillator > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,345,194 A - Document ID: US5345194A - Status: Granted - Kind: A - Application number: 07/914,209 - Filed: 1992-07-14 - Granted: 1994-09-06 - Earliest claimed: 1991-07-23 - Assignees: NEC Corporation - Inventors: Isamu Nagasako - Web page: https://patentgrep.com/patent/US5345194A ## CPC - H10D 64/411: {for FETs} - H03B 5/1852: {the semiconductor device being a field-effect device} - H03D 9/0675: {using field effect transistors (H03D9/0683 takes precedence)} - H03B 7/14: active element being semiconductor device - H10W 72/884: {Die-attach connectors and bond wires} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H03B: GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (generators adapted for electrophonic musical instruments G10H; masers or lasers H01S; generation of oscillations in plasma H05H) - H03D: DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER (masers, lasers H01S; circuits capable of acting both as modulator and demodulator H03C; details applicable to both modulators and frequency-changers H03C; demodulating pulses H03K9/00; transforming types of pulse modulation H03K11/00; coding, decoding or code conversion, in general H03M; repeater stations H04B7/14; demodulators adapted for AC systems of digital information transmission H04L27/00; synchronous demodulators adapted for colour television H04N9/66) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A FET comprising two or more gate pads or terminals, and a reflection type oscillator including the above-mentioned FET. In this oscillator, a dielectric resonator is connected through a coupling line to the first gate pad of the FET and an output terminal is connected to the second pad. When the drain pad of the FET is connected to ground, and a suitable value of capacitive reactance is added to the source pad, then a negative resistance -R appears on the first gate pad, and thus oscillation occurs at a resonance frequency fo of the dielectric resonator. If the load resistance value viewed from the second gate pad is set to R, the maximum oscillation output occurs. Accordingly this oscillator enables to set the oscillation conditions between the source and gate pads of the FET, and the output matching conditions between the second gate pad and the output terminal separately, and thus allows to set the oscillation conditions and the output matching conditions, respectively, simultaneously to the optimum values. ## Claims ### Claim 1 A field effect transistor comprising a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, a plurality of gate bonding pads connected to said gate, one end of said gate being connected to two gate bonding pads, and a resistor interconnected between said two gate bonding pads. ### Claim 2 (depends on 1) A field effect transistor according to claim 1 wherein two gate bonding pads are arranged on opposite sides of said gate. ### Claim 3 (depends on 1) A field effect transistor according to claim 1 wherein said field effect transistor is built in a gallium arsenide substrate. ### Claim 4 (depends on 2) A field effect transistor according to claim 2 mounted in a ceramic package, the source bonding pad thereof being connected to a source terminal outgoing from said ceramic package, the drain bonding pad thereof being connected to a drain terminal outgoing from said ceramic package, and the two gate bonding pads arranged on opposite sides of said gate each being connected to two gate terminals, respectively, and outgoing from said ceramic package. ### Claim 5 (depends on 4) A field effect transistor according to claim 4 wherein said two gate bonding pads arranged on opposite sides of said gate each are connected to the ends, respectively, of said gate, and said gate terminals each outgoing on the opposite sides, respectively, of said ceramic package. ### Claim 6 A high frequency signal oscillator comprising: a field effect transistor including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads each connected to the ends, respectively, of said gate; bias means for supplying bias voltages, respectively, to each electrode of said field effect transistor from power supply; a dielectric resonator connected through a coupling line to one of said gate bonding pads; an output terminal of high frequency signal connected to the other of said gate bonding pads; a capacitive reactance connected to said source bonding pad; and grounding means for said high frequency signal for grounding said drain bonding pad. ### Claim 7 (depends on 6) A high frequency signal oscillator according to claim 6 made in hybrid integrated circuit form. ### Claim 8 (depends on 6) A high frequency signal oscillator according to claim 6 made on a gallium arsenide substrate excluding said dielectric resonator. ### Claim 9 A high frequency signal oscillator comprising: a field effect transistor including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads connected to one end of said gate, and a resistor interconnecting between said two gate bonding pads; bias means for supplying bias voltages, respectively, to each electrode of said field effect transistor from power supply; a dielectric resonator connected through a coupling line to one of said gate bonding pads; an output terminal of high frequency signal connected to the other of said gate bonding pads; a capacitive reactance connected to said source bonding pad; and grounding means for said high frequency signal for grounding said drain bonding pad. ### Claim 10 (depends on 9) A high frequency signal oscillator according to claim 9 made in a hybrid integrated circuit form. ### Claim 11 (depends on 9) A high frequency signal oscillator according to claim 9 made on a gallium arsenide substrate excluding said dielectric resonator. ### Claim 12 (depends on 9) A frequency converter comprising a high frequency signal oscillator according to claim 9, and a mixer for generating an intermediate frequency signal in response to a high-frequency signal from the input terminal thereof and a local oscillation signal from the output terminal of said high frequency signal oscillator. ### Claim 13 (depends on 12) A frequency converter according to claim 12 made in a hybrid integrated circuit form. ### Claim 14 (depends on 12) A frequency converter according to claim 12 made on a gallium arsenide substrate excluding said dielectric resonator. ### Claim 15 A high frequency signal oscillator comprising: a field effect transistor chip including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads each connected to the ends, respectively, of said gate; a ceramic package enclosing said field effect transistor chip therein; a source terminal connected to said source bonding pad and outgoing from said ceramic package; a drain terminal connected to said drain bonding pad and outgoing from said ceramic package; two gate terminals each connected to said two gate bonding pads, respectively, and outgoing from said ceramic package; bias means for supplying bias voltages each to said source, drain and gate terminals, respectively; a dielectric resonator connected through a coupling line to one of said gate terminals; an output terminal of high frequency signal connected to the other of said gate terminals; a capacitive reactance connected to said source terminal; and grounding means for said high frequency signal for grounding said drain terminal. ### Claim 16 (depends on 15) A high frequency signal oscillator according to claim 15 made in hybrid integrated circuit form. ### Claim 17 A high frequency signal oscillator comprising: a field effect transistor chip including a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, and two gate bonding pads connected to one end of said gate, and a resistor interconnecting between said two gate bonding pads; a ceramic package containing said field effect transistor chip therein; a source terminal connected to said source bonding pad and outgoing from said ceramic package; a drain terminal connected to said drain bonding pad and outgoing from said ceramic package; two gate terminals each connected to said two gate bonding pads, respectively, and outgoing from said ceramic package; bias means for supplying bias voltages each to said source, drain and gate terminals, respectively; a dielectric resonator connected through a coupling line to one of said gate terminals; an output terminal of high frequency signal connected to the other of said gate terminals; a capacitive reactance connected to said source terminal; and grounding means for said high frequency signal for grounding said drain terminal. ### Claim 18 (depends on 17) A high frequency signal oscillator according to claim 17 made in hybrid integrated circuit form. ### Claim 19 A field effect transistor comprising a source, a source bonding pad connected to said source, a drain, a drain bonding pad connected to said drain, a gate, two gate bonding pads connected to said gate, said two gate bonding pads being arranged on opposite sides of said gate, a first circuit connected to an end of one of said gate bonding pads, and a second circuit connected to an end of the other of said gate bonding pads, said first circuit being different from said second circuit, wherein said first circuit has a dielectric resonator and said second circuit has a load.