# US 5,345,108 A · Semiconductor device having multi-layer electrode wiring

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- Number: US 5,345,108 A
- Document ID: US5345108A
- Status: Granted
- Kind: A
- Application number: 07/840,925
- Filed: 1992-02-25
- Granted: 1994-09-06
- Earliest claimed: 1991-02-26
- Assignees: NEC Corporation
- Inventors: Takamaro Kikkawa
- Web page: https://patentgrep.com/patent/US5345108A

## CPC

- H10W 20/425: {Barrier, adhesion or liner layers}
- Y10S 257/915: with titanium nitride portion or region
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A semiconductor device having an electrode wiring which prevents generation of hillock and has good stress migration capability is disclosed. A multi layer film including at least two Al-Si-Cu alloy films and at least two titanium nitride films formed by reactive sputtering laminated alternately with the Al-Si-Cu alloy films has a high mechanical strength against deformation and can effectively prevent generation of hillock. Ti-Al intermetallic compounds are formed in grain boundaries and in interfaces, which is effective to restrict generation of a void. Propagation of a void can be prevented by the intermediate titanium nitride film. Further, the formation of the Ti-Al compounds is restricted and an increase of resistance is negligible.

## Claims

### Claim 1

A semiconductor device including an electrode wiring formed selectively on an insulating film on a silicon chip, said electrode wiring comprising an aluminum-silicon-copper alloy film and a titanium nitride film formed on said aluminum-silicon-copper alloy film.

### Claim 2 (depends on 1)

The semiconductor device claimed in claim 1, wherein titanium-aluminum intermetallic compounds are formed in grain boundaries of said aluminum-silicon-copper alloy film and in an interface between said titanium nitride film and said aluminum-silicon-copper film.

### Claim 3

A semiconductor device including an electrode wiring formed selectively on an insulating film on a silicon chip, said electrode wiring comprising a titanium film formed on said insulating film, a first titanium nitride film formed on said titanium film, a first aluminum-silicon-copper alloy film formed on said first titanium nitride film, a second titanium nitride film formed on said first aluminum-silicon-copper alloy film, a second aluminum-silicon-copper alloy film formed on said second titanium nitride film and a third titanium nitride film formed on said second aluminum-silicon-copper alloy.

### Claim 4 (depends on 3)

The semiconductor device claimed in claim 3, wherein titanium-aluminum intermetallic compounds are formed in grain boundaries of said first and second aluminum-silicon-copper alloy films and in an interface between said aluminum-silicon-copper alloy films and said titanium nitride films.