# US 5,345,103 A · Gate controlled avalanche bipolar transistor

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- Number: US 5,345,103 A
- Document ID: US5345103A
- Status: Granted
- Kind: A
- Application number: 07/953,308
- Filed: 1992-09-29
- Granted: 1994-09-06
- Earliest claimed: 1989-07-18
- Assignees: Seiko Instruments Inc.
- Inventors: Kenji Aoki
- Web page: https://patentgrep.com/patent/US5345103A

## CPC

- H10D 12/00: Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D 62/235: {of IGFETs (IGFETs having buried channels H10D30/637)}
- H10D 62/378: {Contact regions to the substrate regions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An insulated gate controlled avalanche bipolar transistor has a heavily doped (with doping of at least 1.times.10.sup.18 cm.sup.-3) substrate and a lightly doped channel layer of the same conductivity type on the substrate. The source/emitter and drain/collector regions extend through the lightly doped surface layer to reach the heavily doped substrate, so that the junction between the drain and the heavily doped substrate promotes avalanche breakdown. A lightly doped region of the same type as the substrate is provided betwen the heavily doped substrate and the contact to the substrate, to provide a resistance between the substrate, which acts as the base of the transistor, and the substrate contact, to permit biasing of the base by resistive voltage drop across the resistance, while the lightly doped channel layer permits a low FET threshold voltage. The lightly doped resistance region may be located on the bottom of the substrate or on the top surface laterally spaced from the source/emitter and drain/collector regions.

## Claims

### Claim 1

A semiconductor device comprising: a semiconductor substrate of a first conductivity type, said substrate having a surface and containing a channel region formed in the surface of said substrate, said substrate having a first impurity concentration equal to or greater than 1.times.10.sup.18 cm.sup.-3 and said channel region having a second impurity concentration which is lower than said first impurity concentration; source and drain regions of a second conductivity type different from the first conductivity type, with said channel region and said substrate being disposed between said source and drain regions, and said source and drain regions being in contact with said substrate; a gate insulating film formed on said channel region; a gate electrode formed on said gate insulating film; a grounded substrate electrode; and a resistance layer formed between said substrate and said substrate electrode so as to be electrically in series with said substrate and said substrate electrode, wherein said device is constructed such that when selected potentials are applied to said source and drain regions and to said gate electrode to place said device into operation, said substrate defines a path for current flow between said source and drain regions, carriers are injected from said source region into said substrate, an impact ionization phenomenon occurs in said substrate at a location in the vicinity of said drain region in order to trigger injection of carriers from said source region into said substrate, and carriers injected from said drain region accumulate in said substrate, due to the presence of said resistance layer, so as to increase the potential of said substrate.

### Claim 2 (depends on 1)

A semiconductor device according to claim 1; wherein said resistance layer is provided on the reverse side of said first conductivity type semiconductor substrate.

### Claim 3 (depends on 1)

A semiconductor device according to claim 1; wherein said resistance layer is provided at said surface of said first conductivity type semiconductor substrate.

### Claim 4 (depends on 1, 2, 3)

A semiconductor device according to claims 1 or 2 or 3; wherein said resistance layer is an impurity diffusion layer of the first conductivity type having a net impurity concentration lower than said first impurity concentration.

### Claim 5 (depends on 1)

A semiconductor device according to claim 1; wherein said channel has a depth of 1,000 .ANG. or less.

### Claim 6 (depends on 1)

A semiconductor device according to claim 1 wherein said source and drain regions are formed in said substrate.

### Claim 7 (depends on 1)

A semiconductor device according to claim 1 having a structure wherein the channel region has a length of 2 .mu.m or more and the selected potential as applied to said drain region is 5 V or lower.

### Claim 8 (depends on 1)

A semiconductor device according to claim 1 wherein said second impurity concentration is equal to or lower than 1.times.10.sup.16 cm.sup.-3.