# US 5,345,101 A · High voltage semiconductor structure and method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,345,101 A
- Document ID: US5345101A
- Status: Granted
- Kind: A
- Application number: 08/082,643
- Filed: 1993-06-28
- Granted: 1994-09-06
- Earliest claimed: 1993-06-28
- Assignees: Motorola, Inc.
- Inventors: Shang-Hui Tu
- Web page: https://patentgrep.com/patent/US5345101A

## CPC

- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- Y10S 257/927: Different doping levels in different parts of PN junction to produce shaped depletion layer
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A high voltage semiconductor structure (10) includes a semiconductor substrate (11) of a first conductivity type. The structure (10) also includes a first region (12) providing a main rectifying junction, a second region (13, 17, 21) of a second conductivity type formed in the semiconductor substrate and surrounding the first region ( 12 ) and a third region (14, 18, 22) of the second conductivity type. The third region (14, 18, 22) has reduced conductivity and greater junction depth compared to the second region (13, 17, 21). The third region (14, 18, 22) surrounds and is in contact with the second region (13, 17, 21) to form field rings which improve (increase) breakdown voltage of the high voltage semiconductor structure (10).

## Claims

### Claim 1

A high voltage semiconductor structure including in combination:
a semiconductor substrate of a first conductivity type;
a first region disposed at a first surface of said semiconductor substrate to provide a main rectifying junction;
a second region of a second conductivity type formed at said first surface of said semiconductor substrate and surrounding said first region, said second region forming a p-n junction between said second region and said semiconductor substrate having a maximum depth below said first surface; and
a third region of said second conductivity type formed at said first surface of said semiconductor substrate, said third region having reduced conductivity compared to said second region, said third region in contact with a first side of said second region, said third region forming a p-n junction between said third region and said semiconductor substrate having a maximum depth below said first surface greater than said maximum depth of said p-n junction between said second region and said semiconductor substrate.

### Claim 2 (depends on 1)

A structure as claimed in claim 1, further including:
a fourth region of said second conductivity type formed at said first surface of said semiconductor substrate, said fourth region surrounding and separate from said third region, said fourth region having conductivity comparable to said second region; and
a fifth region of said second conductivity type formed at said first surface of said semiconductor substrate, said fifth region having conductivity comparable to said third region, said fifth region in contact with a first side of said fourth region.

### Claim 3 (depends on 1)

A structure as claimed in claim 1, wherein said first region comprises a region of said second conductivity type, said first region having a dopant concentration comparable to said second region.

### Claim 4 (depends on 1)

A structure as claimed in claim 1, wherein said first and second regions comprise boron doped silicon.

### Claim 5 (depends on 1)

A structure as claimed in claim 1, further including:
a main p-n junction between said first region and said semiconductor substrate having a maximum depth below said first surface less than said maximum depth of said p-n junction between said third region and said semiconductor substrate.

### Claim 6 (depends on 1)

A structure as claimed in claim 1, wherein a center-to-center separation between said second region and said third region is in the range of from one-half to ten micrometers.

### Claim 7 (depends on 2)

A structure as claimed in claim 2, further including:
a sixth region of said second conductivity type formed at said first surface of said semiconductor substrate, said sixth region separate from said fifth region, said sixth region having conductivity comparable to said fourth region; and
a seventh region of said second conductivity type formed at said first surface of said semiconductor substrate, said seventh region having conductivity comparable to said fifth region, said seventh region in contact with a first side of said sixth region.

### Claim 8 (depends on 7)

A structure as claimed in claim 7, wherein a center-to-center separation between said sixth region and said fourth region is less than a center-to-center separation between said fourth region and said second region.

### Claim 9

A high voltage semiconductor structure comprising:
a semiconductor substrate having a first surface and a first conductivity type;
an active device having a first outer periphery disposed on said first surface;
a first region disposed on said first surface, said first region spaced apart from and surrounding said first outer periphery, said first region having a second conductivity type, a first maximum junction depth and a second outer periphery; and
a second region disposed on said first surface, said second region surrounding and in contact with said second outer periphery, said second region having said second conductivity type of reduced conductivity compared to said first region and a second maximum junction depth, wherein said second maximum junction depth is greater than said first maximum junction depth.