# US 5,345,100 A · Semiconductor rectifier having high breakdown voltage and high speed operation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,345,100 A - Document ID: US5345100A - Status: Granted - Kind: A - Application number: 08/119,561 - Filed: 1993-09-13 - Granted: 1994-09-06 - Earliest claimed: 1991-03-29 - Assignees: Shindengen Electric Manufacturing Co., Ltd. - Inventors: Takashi Kan; Masaru Wakatabe; Mitsugu Tanaka; Shinji Kunori; Akira Sugiyama - Web page: https://patentgrep.com/patent/US5345100A ## CPC - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which comprises a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of one conductivity type provided on the first semiconductor layer, a third semiconductor layer of an opposite conductivity type having a depth D and formed in the second semiconductor layer to provide a pn junction therebetween, the third semiconductor layer defining a plurality of exposed regions of the second semiconductor layer, each of the plurality of exposed regions of the second semiconductor layer having a width W, a relation between the depth D and the width W being given by D.gtoreq.0.5W, and a metal electrode provided on the substrate surface. ## Claims ### Claim 1 A semiconductor rectifier comprising: a first semiconductor layer of a first conductivity type having a main surface; a second semiconductor layer of a second conductivity type formed in said first semiconductor layer to define a plurality of portions of said first semiconductor layer exposed to said main surface, each of said plurality of portions of said first semiconductor layer being surrounded by opposed portions of said second semiconductor layer and forming a p-n junction with each of said opposed portions of said second semiconductor layer below said main surface; a metal electrode provided over a surface of said second semiconductor layer including said plurality of portions of said first semiconductor layer, said metal electrode forming a contact surface with each of said plurality of portions of said first semiconductor layer; and a relation between a depth D and a width W being given by D>0.5W where said depth D is a distance between said contact surface and a bottom of said second semiconductor layer, and said width W being a shortest distance between said opposed portions of said second semiconductor layer below said contact surface. ### Claim 2 (depends on 1) The semiconductor rectifier according to claim 1, wherein said metal electrode is in ohmic contact with both said plurality of portions of said first semiconductor layer and said second semiconductor layer. ### Claim 3 (depends on 1) The semiconductor rectifier according to claim 1, wherein said metal electrode is in ohmic contact with said plurality of portions of said first semiconductor layer, and said metal electrode forms a Schottky barrier contact with said second semiconductor layer. ### Claim 4 (depends on 1) The semiconductor rectifier according to claim 1, wherein said metal electrode is in Schottky barrier contact with said plurality of portions of said first semiconductor layer, and is in ohmic contact with said second semiconductor layer. ### Claim 5 (depends on 1) The semiconductor rectifier according to claim 1, wherein said metal electrode is in Schottky barrier contact with both said plurality of portions of said first semiconductor layer and said second semiconductor layer. ### Claim 6 (depends on 1) The semiconductor rectifier according to claim 1, wherein a depletion layer extends to said plurality of portions of said first semiconductor layer. ### Claim 7 (depends on 1) The semiconductor rectifier according to claim 1, wherein said width W is given by W.sub.bi <W<3W.sub.bi, where W.sub.bi is a thickness of a built-in depletion layer extending to said first semiconductor layer at zero bias voltage. ### Claim 8 (depends on 1) The semiconductor rectifier according to claim 1, wherein each of said plurality of portions of said first semiconductor layer is square. ### Claim 9 (depends on 1) The semiconductor rectifier according to claim 1, wherein each of said plurality of portions of said first semiconductor layer has a stripe-shaped structure. ### Claim 10 (depends on 1) The semiconductor rectifier according to claim 1, wherein an angle .theta. is defined as an angle between said contact surface and a tangent line passing through a point f on said p-n junction, said point f being at an intersection of said p-n junction and a straight line passing through a top of a built-in depletion layer and extending in parallel with said contact surface, said angle .theta. being 60.degree.<.theta.<120.degree.. ### Claim 11 (depends on 1) The semiconductor rectifier according to claim 1, wherein said width W is a width of each of said plurality of portions of said first semiconductor layer. ### Claim 12 A semiconductor rectifier comprising: a first semiconductor layer of a first conductivity type; a plurality of grooves formed in said first semiconductor layer to provide projected portions; a second semiconductor layer of a second conductivity type formed in said first semiconductor layer, except for an exposed surface of each of said projected portions, to define opposed portions of said second semiconductor layer on opposing sides of each of said projected portions, each of said opposed portions of said second semiconductor layer forming a p-n junction with said first semiconductor layer, wherein a depth D of said second semiconductor layer is a distance between said exposed surface of each of said projected portions and a bottom of said p-n junction, and a distance W is a shortest distance between said opposed portions of said second semiconductor layer below said exposed surface of each of said projected portions; a relation between said depth D and said distance W being given by D>0.5W; an angle .theta. being given by 60.degree.<.theta.<90 .degree., where said angle .theta. is an angle between said exposed surface of each of said projected portions and a tangent line passing through a point f on said p-n junction, said point f being at an intersection of said p-n junction and a straight line passing through a top of a built-in depletion layer and extending in parallel with said exposed surface of each of said projected portions; and a metal electrode provided over a surface of said second semiconductor layer including said exposed surface of said projected portions. ### Claim 13 (depends on 12) The semiconductor rectifier according to claim 12, wherein each of said projected portions includes upper corners, and said p-n junction intersects said upper corners of each of said projected portions. ### Claim 14 (depends on 12) The semiconductor rectifier according to claim 12, wherein said p-n junction extends to each of said projected portions to define said shortest distance W between said opposed portions of said second semiconductor layer. ### Claim 15 (depends on 12) The semiconductor rectifier according to claim 12, wherein said metal electrode is in ohmic contact with both said projected portions of said first semiconductor layer and said second semiconductor layer. ### Claim 16 (depends on 12) The semiconductor rectifier according to claim 12, wherein said metal electrode is in ohmic contact with said projected portions of said first semiconductor layer and forms a Schottky barrier contact with said second semiconductor layer. ### Claim 17 (depends on 12) The semiconductor rectifier according to claim 12, wherein said metal electrode is in Schottky barrier contact with said projected portions of said first semiconductor layer, while being in ohmic contact with said second semiconductor layer. ### Claim 18 (depends on 12) The semiconductor rectifier according to claim 12, wherein said metal electrode is in Schottky barrier contact with both said projected portions of said first semiconductor layer and said second semiconductor layer. ### Claim 19 (depends on 12) The semiconductor rectifier according to claim 12, wherein said distance W is given by W.sub.bi <W<3W.sub.bi, where W.sub.bi is a thickness of said built-in depletion layer extending in said first semiconductor layer.