# US 5,345,099 A · Semiconductor device

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- Number: US 5,345,099 A
- Document ID: US5345099A
- Status: Granted
- Kind: A
- Application number: 08/056,627
- Filed: 1993-05-04
- Granted: 1994-09-06
- Earliest claimed: 1992-10-06
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Takahiro Yamada
- Web page: https://patentgrep.com/patent/US5345099A

## CPC

- H10D 62/335: {of charge-coupled devices}
- H10D 44/45: having field effect produced by insulated gate electrodes
- H10F 39/153: {Two-dimensional or three-dimensional array CCD image sensors}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

In a CCD device, on a semiconductor substrate, and in the insulation films, plural first semiconductor regions and plural second semiconductor regions are formed buried in the insulation films, intermediating a tunneling insulation film therebetween in a manner to spatially isolate them from each other.

## Claims

### Claim 1

A charge transfer device comprising:
a semiconductor substrate;
a first insulation film formed on said semiconductor substrate;
a plurality of first semiconductor regions provided on said first insulation film;
a tunneling second insulation film provided on said first semiconductor region;
a plurality of second semiconductor regions formed on said tunneling insulation film, said tunneling insulation film spacially isolating said first semiconductor regions from said second semiconductor regions;
a plurality of first control electrodes provided under respective ones of said first semiconductor regions for controlling a potential of said first semiconductor regions; and
a plurality of second control electrodes provided above respective ones of said second semiconductor regions for controlling a potential of said second semiconductor regions.

### Claim 2

A charge transfer device comprising:
a semiconductor substrate;
a tunneling first insulation film formed on said semiconductor substrate;
a second insulation film formed on said first tunneling insulation film;
a plurality of first semiconductor regions on said insulation film in a charge transferring direction;
a tunneling third insulation film formed over said first semiconductor regions;
a plurality of second semiconductor regions on said tunneling third insulation film in said charge transferring direction, said second semiconductor regions interleaving with said first semiconductor regions, and said first semiconductor regions being spacially isolated from said second semiconductor regions by said tunneling third insulation film;
a plurality of first control electrodes provided under said tunneling first insulation film at respective positions under said first semiconductor regions, for controlling a potential of said first semiconductor regions; and
a plurality of second control electrodes provided above respective ones of said second semiconductor regions, for controlling a potential of said second semiconductor regions.

### Claim 3

A charge transfer device comprising:
a semiconductor substrate;
a first insulation film formed on said substrate;
a tunneling second insulation film formed on said first insulation film;
a third insulation film formed on said first tunneling second insulation film;
a plurality of first semiconductor regions on said third insulation film in a charge transferring direction;
a tunneling fourth insulation film formed over said first semiconductor regions;
a plurality of second semiconductor regions on said tunneling third insulation film in said charge transferring direction in a manner interleaving with said first semiconductor regions, said tunneling fourth insulation film being spatially isolating said first semiconductor regions from said second semiconductor regions;
a plurality of first control electrodes provided under said tunneling first insulation film at respective positions under said first semiconductor regions for controlling a potential of said first semiconductor regions; and
a plurality of second control electrodes provided above respective ones of said second semiconductor regions for controlling a potential of said second semiconductor regions.

### Claim 4

A charge transfer device comprising:
a semiconductor substrate;
a tunneling first insulation film formed on said semiconductor substrate;
a second insulation film formed on said tunneling first insulation film;
a plurality of first semiconductor regions on said second insulation film in a charge transfer direction;
a tunneling third insulation film formed over said first semiconductor regions;
a plurality of second semiconductor regions on said tunneling third insulation film in said charge transfer direction in a manner interleaving with said first semiconductor regions, said tunneling third insulation film spatially isolating said first semiconductor regions from said second semiconductor regions;
a plurality of first control electrodes provided at respective positions under said first semiconductor regions for controlling a potential of said first semiconductor regions; and
a plurality of second control electrodes provided above respective ones of said second semiconductor regions for controlling a potential of said second semiconductor regions.

### Claim 5

A charge transfer device comprising:
a semiconductor substrate;
a tunneling first insulation film formed on said semiconductor substrate;
a second insulation film formed on said tunneling first insulation film;
a plurality of first semiconductor regions on said second insulation film in a charge transfer direction;
a tunneling third insulation film formed over said first semiconductor regions;
a plurality of second semiconductor regions on said tunneling third insulation film in said charge transfer direction in a manner interleaving with said first semiconductor regions, said tunneling third insulation film spatially isolating said first semiconductor regions from said second semiconductor regions;
a first control electrode provided under said first semiconductor regions for controlling a potential of said first semiconductor regions; and
a second control electrode provided above said second semiconductor regions for controlling a potential of said second semiconductor regions.

### Claim 6 (depends on 5)

A charge transfer device in accordance with claim 5 wherein:
said first semiconductor regions consist of first low concentration regions and first high concentration regions; and
said second semiconductor regions consist of second low concentration regions and second high concentration regions.

### Claim 7

A charge transfer device comprising:
a semiconductor substrate;
a plurality of photoelectric transducers on said semiconductor substrate;
a first insulation film formed on said semiconductor substrate;
a plurality of first semiconductor regions provided on said insulation film;
a tunneling second insulation film provided over said first semiconductor regions;
a plurality of second semiconductor regions provided over said insulation film, said tunneling second insulation film spatially isolating said first semiconductor regions from said second semiconductor regions;
a plurality of first control electrodes provided under said first semiconductor regions for controlling a potential of said first semiconductor regions; and
a plurality of second control electrodes provided above said second semiconductor regions, for controlling a potential of said second semiconductor regions.