# US 5,345,097 A · Heterojunction bipolar transistor including collector region of InP and method of fabricating the same

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- Number: US 5,345,097 A
- Document ID: US5345097A
- Status: Granted
- Kind: A
- Application number: 07/948,551
- Filed: 1992-09-23
- Granted: 1994-09-06
- Earliest claimed: 1992-03-02
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Atsushi Nakagawa
- Web page: https://patentgrep.com/patent/US5345097A

## CPC

- H10D 10/821: {Vertical heterojunction BJTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A heterojunction bipolar transistor includes a collector region made of first-conduction-type InP. and a base region connected to the collector region and made of second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions. The atomic fraction "x" is in the range of 0.52 to 0.53. The atomic fraction "y" is in the range of 0.35 to 0.72.

## Claims

### Claim 1

A heterojunction bipolar transistor comprising:
a collector region made of first-conduction-type InP; and
a base region connected to the collector region and made of second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions, wherein the atomic fraction "x" is in the range of 0.52 to 0.53 and the atomic fraction "y" is in the range of 0.35 to 0.72,
further including a semi-insulating substrate of InP, a subcollector region of first conduction type In.sub.x Ga.sub.1-x As on said substrate, and wherein said collector region is situated on said subcollector region.

### Claim 2 (depends on 1)

The heterojunction bipolar transistor of claim 1, wherein the atomic fraction "x" is in the range of 0.524 to 0.526 and the atomic fraction "y" is in the range of 0.485 to 0.505.

### Claim 3 (depends on 1)

The heterojunction bipolar transistor of claim 1, further comprising a first emitter region made of first-conduction-type InP and connected to the base region, and a second emitter region connected to the first emitter region and made of first-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As, wherein the first emitter region extends between the base region and the second emitter region.

### Claim 4

A method of fabricating a heterojunction bipolar transistor, comprising the steps of:
forming a collector region from first-conduction-type InP; and
forming a base region from second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions, wherein the atomic fraction "x" is in the range of 0.52 to 0.53 and the atomic fraction "y" is in the range of 0.35 to 0.72, the base region being connected to the collector region,
wherein said step of forming a collector region further comprises the steps of:
forming a semi-insulating substrate of InP,
forming a subcollector region of first conduction type In.sub.x Ga.sub.1-x As on said substrate, and
forming said collector region on said subcollector region.

### Claim 5 (depends on 1)

The heterojunction transistor of claim 1, further comprising a collector electrode on said subcollector region, said collector electrode surrounding and in contact with said collector region.