# US 5,345,092 A · Light emitting diode including active layer having first and second active regions

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- Number: US 5,345,092 A
- Document ID: US5345092A
- Status: Granted
- Kind: A
- Application number: 08/133,281
- Filed: 1993-10-07
- Granted: 1994-09-06
- Earliest claimed: 1991-01-18
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Haruki Kurihara
- Web page: https://patentgrep.com/patent/US5345092A

## CPC

- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light emitting diode comprises a semiconductor substrate of compound semiconductor, an active layer provided above the semiconductor substrate and including first and second active regions, the first active region being spaced apart from the second active region thereby controlling diffusion of an injected minority carrier in a radial direction, the first active region substantially operating as a light emitting region, and a window for emitting light generated at the first active region.

## Claims

### Claim 1

A light emitting diode comprising:
a semiconductor substrate of a first conductivity type;
a current blocking layer of a second conductivity type provided on said semiconductor substrate;
a recessed portion formed in said current blocking layer so as to extend to said semiconductor substrate;
a first cladding layer of said first conductivity type including a first cladding region buried in said recessed portion, a second cladding region provided on said current blocking layer, and a constricted region located at a peripheral portion of and surrounding said recessed portion;
an active layer of said first conductivity type including a first active region, provided on said first cladding region, substantially operating as a light emitting region, and a second active region provided on said second cladding region, said second active region being separated outward from said first active region by said constricted region;
a second cladding layer of said second conductivity type provided over said active layer so as to cover said first cladding layer;
an ohmic contact layer provided on said second cladding layer; and
a window provided in said ohmic contact layer.

### Claim 2 (depends on 1)

The light emitting diode according to claim 1, wherein said recessed portion is a circular hole.

### Claim 3 (depends on 1)

The light emitting diode according to claim 1, wherein the constricted region is ring-shaped, the window has a ring-shaped periphery, and the ring-shaped periphery has a projection upon the recessed portion within said ring-shaped constricted region.

### Claim 4 (depends on 1)

The light emitting diode according to claim 1, wherein said first cladding region is thicker than said second cladding region.

### Claim 5 (depends on 1)

The light emitting diode according to claim 1, wherein each of said first and second cladding layers has a higher band gap than said active layer.

### Claim 6 (depends on 1)

The light emitting diode according to claim 1, wherein said recessed portion has a ring-shaped peripheral portion and said constricted region is ring-shaped and provides a pn junction between said first and second cladding layers.

### Claim 7 (depends on 1)

The light emitting diode of claim 1, wherein said second active region surrounds said first active region.

### Claim 8

A light emitting diode comprising:
a semiconductor substrate of a first conductivity type having a first surface, said semiconductor substrate including a projected portion having a second surface protruding from said first surface;
a buffer layer of said first conductivity type, provided over said semiconductor substrate, including a first buffer region provided on said second surface, a second buffer region provided on said first surface, and a constricted region located at a peripheral portion of said projected portion;
an active layer of a second conductivity type including a first active region, provided on said first buffer region, substantially operating as a light emitting region, and a second active region provided on said second buffer region, said second active region being separated outward from said first active region by said constricted region;
a mesa-shaped cladding layer of said second conductivity type provided over said active layer so as to cover said buffer layer, said constricted region forming a pn junction between said buffer layer and said mesa-shaped cladding layer;
an ohmic contact layer provided on an opposite surface of said semiconductor substrate; and
a window provided in said ohmic contact layer.

### Claim 9 (depends on 8)

The light emitting diode according to claim 8, wherein said second active region is substantially ring shaped and separated radially outward from said first active region.

### Claim 10 (depends on 8)

The light emitting diode according to claim 8, wherein a periphery of said window is arranged within said constricted region.

### Claim 11 (depends on 8)

The light emitting diode according to claim 8, wherein each of said buffer layer and said mesa-shaped cladding layers has a higher band gap than said active layer.