# US 5,344,797 A · Method of forming interlevel dielectric for integrated circuits

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- Number: US 5,344,797 A
- Document ID: US5344797A
- Status: Granted
- Kind: A
- Application number: 07/969,680
- Filed: 1992-10-30
- Granted: 1994-09-06
- Earliest claimed: 1992-10-30
- Assignees: AT&T Bell Laboratories
- Inventors: Chien-Shing Pai; Yih-Cheng Shih
- Web page: https://patentgrep.com/patent/US5344797A

## CPC

- H10P 95/06: {Planarisation of inorganic insulating materials}
- H10W 20/071: {of dielectric parts thereof}
- H10W 20/098: {by filling between adjacent conductive parts}
- Y10S 148/118: Oxide films
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method of forming an interlevel dielectric suitable for use with semiconductor integrated circuits is disclosed. The dielectric illustratively includes a triple layer sandwich of ozone-TEOS formed between two layers of plasma-enhanced TEOS. The dielectric is capable of filling high-aspect ratio trenches between runners. The ozone-TEOS is formed at a high pressure (approximately 90 Torr) to reduce hydrogen absorption. The reduced-hydrogen content ozone-TEOS is less susceptible to moisture formation and, therefore, presents less risk of degrading subsequently formed aluminum runners.

## Claims

### Claim 1

A method of semiconductor integrated circuit fabrication comprising:
forming a first dielectric overlying a substrate, said dielectric being formed in a reactor having a total chamber pressure and utilizing a TEOS precursor gas containing hydrogen and utilizing ozone;
said reactor having a pressure of approximately 90 Torr and an ozone concentration of 8-12 weight percent, a TEOS flow rate of approximately 1000 sccm and an oxygen flow rate of 1500-2500 sccm whereby the hydrogen content of said dielectric after formation is less than 10 atomic percent.

### Claim 2

A method of semiconductor integrated circuit fabrication comprising:
forming a first silicon dioxide dielectric overlying a substrate in a reactor chamber;
forming a second silicon dioxide dielectric upon said first dielectric, said formation taking place in the same said reactor chamber and utilizing ozone and a precursor gas containing hydrogen;
CHARACTERIZED IN THAT the total chamber pressure of said reactor during formation of said second dielectric is chosen at a sufficiently high value so that the hydrogen content of said second dielectric after formation is less than 10 atomic percent;
etching back said second dielectric in said reactor to expose portions of said first dielectric; and then
forming a third dielectric in said same reaction chamber, said third dielectric covering said second dielectric and the said exposed portions of said first dielectric.

### Claim 3 (depends on 2)

The method of claim 2 in which the pressure of said precursor gas is approximately 90 Torr.

### Claim 4 (depends on 2)

The method of claim 2 in which the precursor gas is TEOS.