# US 5,344,794 A · Method of making a semiconductor chip

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- Number: US 5,344,794 A
- Document ID: US5344794A
- Status: Granted
- Kind: A
- Application number: 08/128,424
- Filed: 1993-09-29
- Granted: 1994-09-06
- Earliest claimed: 1993-03-31
- Assignees: Siemens Components, Inc.
- Inventors: David Whitney; Lynn Wiese
- Web page: https://patentgrep.com/patent/US5344794A

## CPC

- H10F 30/263: {Photothyristors}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10W 70/411: {Chip-supporting parts, e.g. die pads}
- H10W 72/30: Die-attach connectors
- H10W 72/01308: {using permanent auxiliary members, e.g. using alignment marks}
- H10W 72/387: {Flow barriers}
- H10W 72/931: {Shapes of bond pads}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An optically-triggered silicon controlled rectifier (SCR) device (21) mounted on a lead frame (34). The SCR device contains a cathode layer (24), an optical gate or control layer (23), and an anode layer (31) formed on a semiconductor substrate (22). The device is soldered onto a pedestal (33) formed on the lead frame. To connect the device to the lead frame, solder is deposited upon the anode layer and the solder fixes the anode layer to the pedestal on the lead frame. The pedestal may be formed by etching or stamping a depression (35) in the lead frame. The device is centered on the pedestal such that the edges of the device are located adjacent the depression, and are spaced from the lead frame.

## Claims

### Claim 1

A method of fabricating a semiconductor chip comprising:
providing a semiconductor substrate having opposed side edges;
diffusing a layer of doped impurities into a surface of aid substrate between said edges;
forming a pedestal on a surface of a lead frame; and
mounting said substrate on said pedestal with an ohmic contact deposited between said layer and said pedestal such that said side edges extend beyond said pedestal and are spaced from said lead frame.

### Claim 2 (depends on 1)

The method of claim 1 wherein said forming a pedestal includes forming a depression in the surface of said lead frame.

### Claim 3 (depends on 2)

The method of claim 2 wherein said depression is stamped in said surface of said lead frame.

### Claim 4 (depends on 2)

The method of claim 2 wherein said depression is etched in said surface of said lead frame.

### Claim 5

A method of fabricating an optically-triggered silicon controlled rectifier (SCR) device comprising:
providing an N type substrate having an upper surface, a lower surface and opposed side edges;
diffusing a first P+ layer into the upper surface of said substrate;
diffusing an N+ layer into an upper surface of said P+ layer;
forming a permeable oxide layer on a portion of said first P+ layer;
depositing a cathode contact on said N+ layer;
diffusing a second P+ layer into said lower surface of said substrate;
depositing an anode contact on said second P+ layer;
forming a pedestal on a surface of a lead frame; and
mounting said substrate on said pedestal with said anode contact fixed to said pedestal such that said side edges extend beyond said pedestal and are spaced from said lead frame.

### Claim 6 (depends on 5)

The method of claim 5 wherein said forming a pedestal includes forming a depression in the surface of said lead frame.

### Claim 7 (depends on 6)

The method of claim 6 wherein said depression is stamped in said surface of said lead frame.

### Claim 8 (depends on 6)

The method of claim 6 wherein said depression is etched in said surface of said lead frame.