# US 5,344,526 A · Method for etching diamond

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- Number: US 5,344,526 A
- Document ID: US5344526A
- Status: Granted
- Kind: A
- Application number: 08/123,061
- Filed: 1993-09-16
- Granted: 1994-09-06
- Earliest claimed: 1993-09-16
- Assignees: Sumitomo Electric Industries, Ltd.
- Inventors: Yoshiki Nishibayashi; Shinichi Shikata
- Web page: https://patentgrep.com/patent/US5344526A

## CPC

- H10P 50/242: {of Group IV materials}
- B81C 1/00531: {Dry etching}
- C04B 41/5338: {Etching (for obtaining decorative effects B44C1/22; etching of specific electronic compounds, see the relevant places, e.g. etching of semiconductor bodies H10P50/00)}
- C04B 41/5346: {Dry etching}
- C04B 41/91: involving the removal of part of the materials of the treated articles, e.g. etching
- B81B 2201/035: Microgears
- B81C 2201/0132: Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)

## Abstract

A diamond surface is selectively etched by forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, in which a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.

## Claims

### Claim 1

A method for etching a diamond surface comprising steps of forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, wherein a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.

### Claim 2 (depends on 1)

The method for etching a diamond surface according to claim 1, wherein said inert gas is argon.

### Claim 3 (depends on 1)

The method for etching a diamond surface according to claim 1, wherein said mask is formed from aluminum, and said concentration of oxygen is from 0.1 to 20% based on the whole volume of the mixture.

### Claim 4 (depends on 3)

The method for etching a diamond surface according to claim 3, wherein said concentration of oxygen is from 0.3 to 20%.

### Claim 5 (depends on 1)

The method for etching a diamond surface according to claim 1, wherein said mask is formed from SiO.sub.2, and said concentration of oxygen is from 0.06 to 20% based on the whole volume of the mixture.

### Claim 6 (depends on 5)

The method for etching a diamond surface according to claim 5, wherein said concentration of oxygen is from 0.2 to 20%.