# US 5,344,492 A · Vapor growth apparatus for semiconductor devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,344,492 A - Document ID: US5344492A - Status: Granted - Kind: A - Application number: 08/089,526 - Filed: 1993-07-21 - Granted: 1994-09-06 - Earliest claimed: 1992-07-23 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Mitsuo Sato; Kiyoshi Yoshikawa; Yuusuke Sato - Web page: https://patentgrep.com/patent/US5344492A ## CPC - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A vapor growth apparatus has a susceptor which rotates in a water cooled reaction tube with holding semiconductor susbstrates thereon. A heater is provided in order to heat the susceptor and to maintain a predetermined temperature. This heater is comprised of an inner heater, which heats the inner part of the susceptor, and a peripheral heater, which heats the peripheral part of the susceptor. The peripheral heater is made thicker than the inner heater. In addition, these inner and peripheral heaters are connected in parallel with each other. So, the peripheral heater can generate more heat than the inner heater so as to compensate the temperature decrease in the peripheral part of the susceptor, without loosing the mechanical strength of the whole heater. ## Claims ### Claim 1 A vapor growth apparatus for semiconductor devices, comprising: a susceptor which rotates in a water cooled reaction room while holding semiconductor substrates thereon; and a heater for heating said susceptor; wherein said heater comprises an inner and a peripheral heater electrically connected in parallel with each other. ### Claim 2 (depends on 1) The vapor growth apparatus as claimed in claim 1, wherein the temperature of said peripheral heater rises higher than that of said inner heater. ### Claim 3 (depends on 1) The vapor growth apparatus as claimed in claim 1, wherein the total resistance value of said peripheral heater is lower than that of said inner heater. ### Claim 4 (depends on 1) The vapor growth apparatus as claimed in claim 1, wherein said peripheral heater is thicker than said inner heater. ### Claim 5 (depends on 1) The vapor growth apparatus as claimed in claim 1, wherein the cross-sectional area of said peripheral heater is larger than that of said inner heater. ### Claim 6 (depends on 1) The vapor growth apparatus as claimed in claim 1, wherein said peripheral heater is comprised of an outer circle and two inner semi-circles, which are electrically connected so as to compose a series-parallel circuit. ### Claim 7 (depends on 1) The vapor growth apparatus as claimed in claim 1, wherein both ends of said inner and peripheral heaters are fixed to current supply terminals respectively through connecting blocks which are fixed to each end of said heaters. ### Claim 8 A vapor growth apparatus for semiconductor devices, comprising: a susceptor which rotates in a water cooled reaction room with holding semiconductor wafers thereon; a first heater for heating the inner part of said susceptor; and a second heater for heating the peripheral part of said susceptor, said second heater having the total resistance value lower than that of said first heater. ### Claim 9 (depends on 8) The vapor growth apparatus as claimed in claim 8, wherein said second heater is further comprised of an outer circle and two inner semi-circles, which are connected to compose a series-parallel circuit. ### Claim 10 (depends on 8) The vapor growth apparatus as claimed in claim 8, wherein said second heater is thicker than said first heater. ### Claim 11 A vapor growth apparatus for semiconductor devices, comprising: a susceptor which rotates in a water cooled reaction room while holding semiconductor substrates thereon; a heater for heating said susceptor; and a pair of current supply terminals for supplying said heater with electric current; wherein said heater comprises an inner and a peripheral heater electrically connected in parallel to each other.