Ion implantation system

A system for implanting ions into an object to be process in vacuum atmosphere, comprising:

• support means for supporting the object;
• an ion source device for generating plasma in which ions to be used are included;
• means for drawing out the ions, as an ion beam, from the plasma;
• guide means for accelerating and shooting the ion beam to the object supported by the support means;
• electron supply means arranged between the ion source device and the guide means to supply electrons to the ion beam so as to neutralize charges in it;
• a Faraday cup located adjacent to the support means to enclose the object for measuring the amount of ions implanted on the basis of secondary electrons generated from the object at the time of ion implantation;
• a suppressor electrode for suppressing the flow-out of the secondary electrons from the Faraday cup and having a main surface exposed to the secondary electrons and made of a high resistance conductive material whose resistance value is in a range of 10.sup.-2 .OMEGA.cm-10.sup.5 .OMEGA.cm;
• a power source for adding negative potential to the suppressor electrode.

A system for implanting ions into an object to be processed in vacuum atmosphere, comprising:

• support means for supporting the object to be process;
• an ion source device for generating plasma in which ions to be used are included;
• means for extracting the ions, as an ion beam, from the plasma;
• guide means for accelerating and shooting the ion beam to the object supported by the support means;
• a Faraday cup located adjacent to the support means to enclose the object for measuring the amount of ions implanted on the basis of secondary electrons generated from the object at the time of ion implantation;
• a suppressor electrode for suppressing the flow-out of the secondary electrons from the Faraday cup and having a main surface exposed to the secondary electrons and made of a high resistance conductive material whose resistance value is in a range of 10.sup.-2 .OMEGA.cm-10.sup.5 .OMEGA.cm;
• a power source for adding negative potential to the suppressor electrode;
• and
• a plasma generating device connected to the Faraday cup to supply electrons so as to neutralize positive charges stored on the surface of the object at the time of ion implantation, and having a plasma generating chamber communicated with the Faraday cup through an opening, which is designed such that the object is not present in a scope defined by lines of sight spreading outside from the plasma generating chamber through the opening.