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US 5,341,012 AGranted
CMOS device for use in connection with an active matrix panel
AssigneeSeiko Epson Corporation
InventorsToshiyuki Misawa, Hiroyuki Oshima
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Abstract
An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.
Claims3
A CMOS device, comprising:
- a substrate;
- a thin silicon film carried by said substrate;
- a thin film transistor formed from said thin silicon film, and carried by the substrate, said thin film transistor having a source region and a drain region formed from at least a first type of impurity;
- and
- a second transistor, formed from said thin silicon film, and carried by the substrate, said second transistor having a source region and a drain region formed from at least said first type of impurity and a second type of impurity;
- wherein the concentrations of the first type of impurity and second type of impurity are different from each other.
3 more elements
Dependencies are inferred from the claim text.