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US 5,335,203 AGranted
Semiconductor integrated circuit device with internal voltage drop circuits
AssigneesHitachi, Ltd., Hitachi VLSI Engineering Corp.
InventorsKyoko Ishii, Shinichi Miyatake, Tsutomu Takahashi, Shinji Udo, Hiroshi Yoshioka, Mitsuhiro Takano, Makoto Morino
Life of this patent
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Abstract
A semiconductor memory device has a plurality of divided memory blocks, each of which has its X-system addresses assigned so that an equal number of word lines in a plurality of sets of memory mats and sense amplifiers may be selected. Each memory block is equipped with a plurality of internal voltage drop circuits for generating a supply voltage from the outside into the operating voltages of the sense amplifiers.
Claims8
A semiconductor integrated circuit device comprising:
- a plurality of divided memory blocks, each of which includes a plurality of sets of memory mats arranged with dynamic memory cells in a matrix shape and sense amplifiers for amplifying signals read out of said memory mats;
- a plurality of internal voltage drop circuits, each of which is coupled to receive a supply voltage from outside of the semiconductor integrated circuit device for generating operating voltages of said sense amplifiers;
- and
- a plurality of pads, each of which respectively corresponds to a predetermined one of said internal voltage drop circuits, for respectively coupling said plurality of internal voltage drop circuits to said supply voltage.
1 more element
Dependencies are inferred from the claim text.