Low voltage programmable storage element

A programmable storage device, comprising:

• a plurality of first resistors including at least one electrically tunable first resistor;
• switching means for operatively coupling said first resistors in series in response to a plurality of first control signals and for operatively coupling said first resistors in parallel in response to a plurality of second control signals for permitting programming of said first resistors;
• and
• means for determining whether or not said first resistors have been programmed.

A semiconductor device having a programmable storage element for programming redundancy, said semiconductor device comprising:

• a plurality of first resistors including at least one electrically tunable first resistor;
• a plurality of second resistors including at least one electrically tunable second resistor;
• a plurality of first transistors for operatively coupling said first resistors in series in response to a plurality of first control signals and for operatively coupling said resistors in parallel in response to a plurality of second control signals for permitting programming of said at least one electrically tunable first resistor using a programming current having a magnitude greater than or equal to a predetermined threshold current and having a pulse width greater than a predetermined time period;
• and
• a plurality of second transistors for operatively coupling said second resistors in series in response to a plurality of third control signals and for operatively coupling said second resistors in parallel in response to a plurality of fourth control signals for permitting programming of said at least one electrically tunable second resistor using a second programming current;
• and
• a plurality of third transistors operatively coupled to produce a latch for comparing a first voltage drop across said first resistors with a second voltage drop across said second resistors to determine whether or not one of said at least one electrically tunable first resistor and said at least one electrically tunable second resistor has been programmed.

A memory element, comprising:

• a programmable polysilicon means;
• means for setting a reference resistance;
• comparing means disposed between said programmable polysilicon means and said setting means for sensing differences in resistance therebetween;
• means for programming said programmable polysilicon means by passing a current therethrough sufficient to decrease its resistance by a discrete amount;
• and
• output means coupled to said comparing means for producing a first signal if said programmable polysilicon means has a greater resistance than said setting means, and for producing a second signal if said setting means has a greater resistance than said programmable polysilicon means.