Process for selective formation of II-VI group compound film
AssigneeCanon Kabushiki Kaisha
InventorsHiroyuki Tokunaga, Takao Yonehara
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Abstract
A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).
Claims10
A semiconductor device having a II-VI group compound film, which comprises:
- a substrate;
- a first electrode provided on said substrate;
- a polycrystalline or amorphous insulating film provided on said first electrode having a non-nucleation surface with small nucleation density and a nucleation surface with larger nucleation density than the nucleation density of said non-nucleation surface and a large area sufficient for a number of nuclei to be formed;
- a II-VI group compound film on said nucleation surface formed by applying a II-VI group compound film forming treatment on said insulating film;
- and
- a second electrode provided in contact with said II-VI group compound film.
Dependencies are inferred from the claim text.