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US 5,334,860 AGranted
Panel having thin film element formed thereon
AssigneeCasio Computer Co., Ltd.
InventorHideo Naito
Life of this patent
Estimating the term…
Abstract
An insulating substrate has thin film transistors, and scanning and data wires for supplying signals to the transistors. Each of the wires has a two-layered structure comprising a lower metal film and an upper metal film. Oxide films serving as etching stopper films and having a width smaller than each of the lower and upper metal films are interposed between the lower and upper metal films over the entire length thereof.
Claims20
A panel having thin film elements formed thereon comprising:
- an insulating substrate;
- a plurality of thin film elements formed on the substrate, each including a plurality of thin films laminated on one another to have a predetermined form;
- and
- wires connected to at least one of the thin film elements, for supplying a signal thereto, each of the wires having a lower conductive film formed above the insulating substrate, an upper conductive film formed on the lower conductive film to be electrically connected thereto, and an etching stopper film interposed between the lower and upper conductive films,
- wherein the etching stopper film has a width smaller than the lower conductive film and extends substantially over the entire length thereof, and is an insulating oxide film formed by oxidizing a surface of the lower conductive film, and the upper conductive film has a width larger than the etching stopper film.
2 more elements
A thin-film-transistor panel comprising:
- an insulating substrate;
- a plurality of lower conductive films formed on the substrate and extending in a longitudinal or lateral direction, each of the lower conductive films having a plurality of projections formed at regular intervals and corresponding to a plurality of gate electrodes;
- a plurality of oxide insulating films formed by oxidizing at least part of surfaces of the lower conductive films;
- a plurality of upper conductive films each covering a corresponding one of the oxide insulating films and a corresponding one of the lower conductive films, and having a shape corresponding to that of the lower conductive film, each of the upper conductive films cooperating with corresponding one of the lower conductive films to form a gate electrode and a scanning wire;
- a gate insulating film covering substantially the entire surface of the insulating substrate provided with the lower and upper conductive films;
- a plurality of semiconductor films formed at locations corresponding to the gate electrode portions of the lower and upper conductive films;
- a plurality of source electrodes and a plurality of drain electrodes, each pair of the source and drain electrodes being formed in corresponding one of the semiconductor films, spaced by a predetermined distance from each other so as to form a channel portion in the semiconductor film, thereby being electrically connected thereto;
- a plurality of data wires each connecting, to one another, one of a group of the source electrodes and a group of the drain electrodes, in the lateral direction or longitudinal direction;
- and
- a plurality of transparent electrodes each connected to corresponding one contained in the other of the groups.
7 more elements
A thin film device comprising:
- a plurality of thin film elements, each including a plurality of thin films laminated on one another to have a predetermined form;
- and
- wires, connected to at least one of the thin film elements, for supplying signals thereto, at least one of the wires having a lower conductive film, an upper conductive film formed on the lower conductive film electrically connected thereto, and an etching stopper film interposed between the lower and upper conductive films,
- wherein the etching stopper film is an insulating film formed by processing the lower conductive film,
- wherein the etching stopper film is formed by oxidizing a surface of the lower conductive film.
2 more elements
A thin-film-transistor panel comprising:
- an insulating substrate;
- a plurality of lower conductive films formed on the substrate, each of the lower conductive films having a plurality of projections corresponding to a plurality of gate electrodes;
- a plurality of insulating films formed by processing at least part of surfaces of the lower conductive films;
- a plurality of upper conductive films each covering a corresponding one of the insulting films and a corresponding one of the lower conductive films, and each of the upper conductive films cooperating with a corresponding one of the lower conductive films to form a gate electrode and a scanning wire from among said plurality of gate electrodes;
- a gate insulating film covering at least locations corresponding to gate electrode portions of the lower and upper conductive films;
- a plurality of semiconductor films formed at locations corresponding to the gate electrode portions of the lower and upper conductive films;
- a plurality of source electrodes and a plurality of drain electrodes, each pair of the source and drain electrodes being formed on a corresponding one of the semiconductor films, spaced by a predetermined distance from each other;
- a plurality of data wires each connecting one of a group of the source electrodes and a group of the drain electrodes;
- and
- a plurality of electrodes each connected to a corresponding one contained in the other of the groups.
7 more elements
A semiconductor device comprising:
- a semiconductor element including a plurality of thin films laminated on one another to have a predetermined form;
- and
- a wire, connected to the semiconductor element, for supplying a signal thereto, the wire having a lower conductive film, an upper conductive film formed on the lower conductive film electrically connected thereto, and an etching stopper film interposed between the lower and upper conductive films,
- wherein the etching stopper film is an insulating film formed by processing a surface region of the lower conductive film,
- wherein the etching stopper film is formed by oxidizing the surface region of the lower conductive film.
2 more elements
Dependencies are inferred from the claim text.