Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film

A thin-film transistor panel comprising an insulative substrate and a plurality of thin-film transistor elements arranged at predetermined intervals on the substrate, and connecting means electrically connecting said thin-film transistor elements, each of said thin-film transistor elements comprising:

• a gate electrode;
• a gate-insulating film;
• an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween;
• an n-type semiconductor layer having an anodically oxidized region;
• and
• source and drain electrodes electrically connected to portions of the i-type semiconductor layer through the n-type semiconductor layer and having anodically oxidized surface regions for protecting said source and drain electrodes and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes;
• said connecting means including data lines electrically connected to said drain electrodes of said thin-film transistor elements, and having an anodically oxidized surface region.

A thin-film transistor panel comprising a plurality of thin-film transistor elements arranged in a matrix form, and data lines and gate lines connected to said thin-film transistor elements,

• each of said thin-film transistor elements comprising:
• a gate electrode;
• a gate-insulating film;
• an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween;
• an n-type semiconductor layer having an anodically oxidized region;
• and
• source and drain electrodes electrically connected to the portions of the i-type semiconductor layer through the n-type semiconductor layer and isolated from each other by the anodically oxidized region of said n-type semiconductor layer which is located between said source and drain electrodes;
• and
• each of said data lines having an anodically oxidized surface region.

A thin-film transistor panel comprising an insulative substrate, thin-film transistor elements arranged in a matrix form on the substrate, and pixel electrodes connected to the thin-film transistor elements, each of said thin-film transistor elements comprising:

• a gate electrode;
• a gate-insulating film;
• an i-type semiconductor layer to face the gate electrode through the gate insulating film therebetween;
• an n-type semiconductor layer;
• source and drain electrodes;
• a first contact layer and a first transparent conductive film located between said source electrode and said n-type semiconductor layer for providing an ohmic contact between said source electrode and said n-type semiconductor layer, and
• a second contact layer and a second transparent conductive film located between said drain electrode and said n-type semiconductor layer for providing an ohmic contact between said drain electrode and said n-type semiconductor layer,
• the first transparent conductive films located between said source electrodes and said n-type semiconductor layers are integrally formed with the pixel electrodes, and said drain electrodes cover respective ones of said second transparent conductive films.