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AssigneeHitachi, Ltd.
InventorsHiroaki Wakabayashi, Yoshinori Nakayama, Fumio Murai, Shinji Okazaki
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In an electron beam exposure method for production very high-integration semiconductor devices and its related apparatus in a conventional method, the exposure is divided into fine divisions and carried out by performing a number of shots. However, by utilizing an aperture stop produced by working a single crystalline silicon thin film finely, exposure of a predetermined range is done by one shot. According to the invention, the exposure can be accomplished by the number of shots which is smaller by about two orders than that of the conventional technique and the throughput can be improved remarkably. Since the shot number does not substantially differ depending on whether patterns are complicated or not, individual steps can be processed within substantially identical time.
A pattern forming mask for charged or electron beam comprising:
A charged beam exposure method using a charged beam to expose repetition patterns to a semiconductor chip comprising the steps of:
A pattern exposure apparatus comprising:
A pattern exposure apparatus comprising:
Dependencies are inferred from the claim text.