Method of producing a self-aligned window at recessed intersection of insulating regions
AssigneeTexas Instruments Incorporated
InventorsDavid J. McElroy, Sung-Wei Lin, Manzur Gill
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Abstract
An integrated circuit structure and process relating to a self-aligned window at the recessed junction of two insulating regions formed on the surface of a semiconductor body. The window may include a trench forming an isolation region between doped semiconductor regions, or may include an electrical conductor connected to a doped semiconductor region, or may include an electrical conductor separated from doped semiconductor regions by an electrical insulator. Embodiments include, but are not limited to, a field-effect transistor, a tunnelling area for a floating gate transistor, and an electrical connection to a doped area of the substrate.
Claims9
A method of making a window between oxide insulating regions of an integrated circuit structure, comprising the steps of:
- forming on a semiconductor substrate a first oxide insulating region having a sloped wall;
- after forming said first oxide insulating region, growing a second oxide insulating region on the surface of said substrate, adjacent to said first oxide insulating region, such that said sloped wall and an edge of said second oxide insulating region form a recessed area;
- etching said recessed area such that opposing walls of said first oxide insulating region and said second oxide insulating region define a window region to the surface of said substrate.
Dependencies are inferred from the claim text.