Method of forming T-shaped electrode

A method of manufacturing an electrode having a T-shaped comprising the steps of:

• providing a substrate;
• forming a mask layer on the substrate;
• forming a first negative type resist layer on the mask layer;
• exposing the first resist layer through an exposure mask with a first exposure energy, the exposure mask including a phase shifter pattern having an edge, so that a first unexposed pattern corresponding to the edge of the phase shifter pattern is formed on the first resist layer, the first unexposed pattern having a first width;
• developing the exposed first resist layer to remove the first unexposed pattern for exposing the mask layer;
• etching the mask layer using the first resist layer as a mask to form a first aperture corresponding to the first unexposed pattern exposing the substrate;
• removing the exposed first resist pattern to obtain a structure formed from the substrate and the mask layer having the first aperture;
• forming a second negative type resist layer on the structure obtained by the first resist pattern removing step;
• exposing the second resist layer through the exposure mask with a second exposure energy, the second exposure energy being less than the first exposure energy, so that a second unexposed pattern corresponding to the edge of the phase shifter pattern is formed on the second resist layer over the first aperture, the second unexposed pattern having a second width greater than the first width;
• developing the exposed second resist layer to remove the second unexposed pattern to form a second aperture exposing the substrate through the mask layer and the second resist layer;
• and
• depositing a material on the substrate within the second aperture to form the electrode having the T-shaped.

A method of manufacturing a structure having a T-shaped cross section comprising the steps of:

• providing a substrate;
• forming a mask layer on the substrate;
• forming a first negative type resist layer on the mask layer;
• exposing the first resist layer through an exposure mask with a first exposure energy, the exposure mask including a phase shifter pattern having an edge so that a first line-like unexposed pattern corresponding to the edge of the phase shifter pattern is formed on the first resist layer, the first line-like unexposed pattern having a first width;
• developing the exposed first resist layer to remove the first line-like unexposed pattern so that the mask layer is exposed through the removed first line-like unexposed pattern;
• etching the mask layer using the first resist layer as a mask to form a first aperture which exposes the substrate;
• removing the first resist pattern;
• forming a second negative type resist layer on the first mask layer and the exposed substrate;
• exposing the second resist layer through the exposure mask with a second exposure energy, the second exposure energy being less than the first exposure energy so that a second line-like unexposed pattern corresponding to the edge of the phase shifter pattern is formed over the first aperture on the second resist layer, the second line-like unexposed pattern having a second width greater that the first width;
• developing the exposed second resist layer to remove the second line-like unexposed pattern so that the first mask layer and the substrate are exposed through the removed second line-like unexposed pattern;
• and
• depositing a material of the structure on said substrate within the removed second line-like unexposed pattern to form a structure having the T-shaped cross section.