Back to results
US 5,334,259 AGranted
Amorphous silicon solar cell and method of manufacture
AssigneeSanyo Electric Co., Ltd.
InventorsTakayuki Mizumura, Kenji Sawada, Naoki Kojima, Yasuyoshi Kawanishi, Masatoshi Otsuki
Life of this patent
Estimating the term…
Abstract
A method of amorphous silicon solar cell manufacture comprises forming thin films of transparent electrode, amorphous silicon, and backside electrode, in that order, on a transparent substrate. An alkali resistant metal is used For the backside electrode. The backside electrode and the amorphous silicon layer are wet-etched, thereby opening holes or grooves that penetrate through these layers.
Claims19
A method of amorphous silicon solar cell manufacture comprising forming thin layers of:
- (a) transparent electrode;
- (b) amorphous silicon;
- and
- (c) backside electrode;
- in that order, on a transparent substrate;
- and characterized in that:
- (d) an alkali resistant metal is used for said backside electrode;
- and
- (e) said backside electrode is wet-etched using a first etchant and said amorphous silicon layer is wet-etched with a second, alkaline etchant solution, thereby opening holes or grooves that penetrate through these layers.
6 more elements
A method of amorphous silicon solar cell manufacture comprising forming thin layers of:
- (a) transparent electrode;
- (b) amorphous silicon;
- and
- (c) backside electrode;
- in that order, on a transparent substrate;
- and characterized in that:
- (d) an alkali resistant metal is used for said backside electrode;
- (e) said backside electrode is wet-etched using a first etchant and said amorphous silicon layer is wet-etched with a second alkaline etchant solution, thereby opening holes or grooves that penetrate through these layers;
- and further characterized in that:
- (f) a metallic thin film attachment layer is formed between said backside electrode and said amorphous silicon layer;
- (g) said backside electrode is attached to said amorphous silicon layer via said metallic thin film attachment layer;
- and
- (h) in step (e) said backside electrode and said metallic thin film attachment layer are wet-etched using said first etchant, and said amorphous silicon layer is wet-etched with said second alkaline etchant solution, thereby opening said holes or grooves that penetrate through these layers.
10 more elements
An amorphous silicon solar cell comprising thin layers of:
- (a) transparent electrode;
- (b) amorphous silicon;
- and
- (c) backside electrode comprising an alkali resistant metal;
- formed in that order on a transparent substrate;
- wherein holes or grooves are provided through said backside electrode and amorphous silicon layer by wet-etching, and further characterized in that;
- (d) a metallic thin film attachment layer is sandwiched between said backside electrode and the amorphous silicon layer;
- (e) said backside electrode adheres to said amorphous silicon layer via said metallic thin film attachment layer;
- and
- (f) holes or grooves are provided through said backside electrode and said thin film attachment layer by wet=etching using a first etchant, and through the amorphous silicon layer by wet-etching using a second, alkaline etchant solution.
7 more elements
A method of amorphous silicon solar cell manufacture comprising forming thin layers of:
- (a) transparent electrode;
- (b) amorphous silicon;
- and
- (c) backside electrode;
- in that order, on a transparent substrate;
- and characterized in that:
- (d) an alkali resistant metal is used for said backside electrode;
- and
- (e) said backside electrode and said amorphous silicon layer are wet-etched according to the following sequence:
- (i) said backside electrode is wet-etched using a first etchant;
- (ii) said amorphous silicon layer is treated with an aqueous solution of a fluoride compound;
- and
- (iii) said amorphous silicon layer is wet-etched with a second alkaline etchant solution;
- thereby opening holes or grooves that penetrate through these layers.
11 more elements
A method of amorphous silicon solar cell manufacture comprising forming thin layers of:
- (a) transparent electrode;
- (b) amorphous silicon;
- and
- (c) backside electrode;
- in that order, on a transparent substrate;
- and characterized in that:
- (d) an alkali resistant metal is used for said backside electrode;
- (e) said backside electrode is wet-etched using a first etchant and said amorphous silicon layer is wet-etched with a second alkaline etchant solution, thereby opening holes or grooves that penetrate through these layers;
- and further characterized in that:
- (f) a metallic thin film attachment layer is formed between said backside electrode and said amorphous silicon layer;
- (g) said backside electrode is attached to said amorphous silicon layer via said metallic thin film attachment layer;
- and subsequently
- (h) in step (e) said backside electrode, said metallic thin film attachment layer, and said amorphous silicon layer are wet-etched according to the following sequence:
- (i) said backside electrode and said metallic thin film attachment layer are wet-etched using said first etchant;
- (ii) said amorphous silicon layer is treated with an aqueous solution of a fluoride compound;
- and
- (iii) said amorphous silicon layer is wet-etched with said second alkaline etchant solution;
- thereby opening holes or grooves that penetrate through these layers.
15 more elements
Dependencies are inferred from the claim text.