Mask structure for x-ray exposure and x-ray exposure device and method using it

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, and which is utilized for exposing plural regions on a wafer to X-rays one after another, the mask structure further comprising detecting means for detecting a state change of the mask structure from its steady state during movement of the wafer from one region to the next region, said process comprising the steps of:

• locating the mask support and the absorber pattern of the mask structure with a gap between the mask structure and the wafer having one distance;
• exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure;
• widening the gap having the one distance to a gap having another distance and moving the next region on the wafer to be exposed toward the area beneath the mask structure;
• narrowing the distance between the mask structure and the wafer to restore the latter gap to the former gap;
• and
• detecting recovery of the mask structure from a state change caused in said widening step and in said narrowing step to a steady state by the detecting means provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, wherein the mask structure has a piezoelectric film formed on the surface of the mask support such that a change of bend quantity of the mask support from its steady state can be detected as an output voltage from the piezoelectric film, said process comprising the steps of:

• exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure;
• moving a next region on the wafer to be exposed toward the area beneath the mask structure;
• and
• detecting recovery of the mask structure from a change of bending quantity caused in said moving step to a steady state by the piezoelectric film provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.

A process of exposing plural regions on a wafer to X-rays using an X-ray mask structure which comprises a retaining frame, a supporting frame, a mask support and an absorber pattern, the mask structure comprising a piezoelectric film for detecting a change of acceleration of the mask structure from steady state, said process comprising the steps of:

• exposing one region on the wafer to X-rays through the mask support and the absorber pattern of the mask structure;
• moving a next region on the wafer to be exposed toward the area beneath the mask structure;
• and
• detecting recovery of the mask structure from a change of acceleration caused in said moving step to a steady state by the piezoelectric film provided in the mask structure, and then exposing the next region to X-rays through the mask support and the absorber pattern.