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US 5,332,952 AGranted
Quantum phase interference transistor
AssigneeSony Corporation
InventorsRyuichi Ugajin, Akira Ishibashi
Life of this patent
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Abstract
Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the electron waves; characterized in that the gate electrode has the construction of a capacitor.
Claims1
A quantum phase interference transistor comprising:
- an emitter for emitting electron waves into a vacuum;
- a gate electrode for controlling the phase difference between a plurality of electron waves;
- and a collector for collecting the plurality of electron waves;
- characterized in that the collector is formed of a thin film.
1 more element
Dependencies are inferred from the claim text.