US 5,332,915 A · Semiconductor memory apparatus

Abstract

A high dielectric film instead of an oxidizing film conventionally used is used in the non-volatile memory of an MoNoS construction. Using a mixed film composed of a high dielectric constant film and an amorphous insulating film for the trap film, the ratio of the voltage applied to the tunnel oxidizing film is increased so that writing and erasing operations can be effected with a low voltage. Penetration of the electrons into the electrode and the flow of positive holes from the electrode are prevented so as to increase the flow efficiency.

Claims3

Dependent claims

A semiconductor memory apparatus comprising a tunnel oxidizing film formed on a Si substrate, a mixed film composed of a high dielectric constant insulating film and an amorphous insulating film formed on the tunnel oxidizing film, a metallic film formed on the mixed film, a high dielectric film formed on the metallic film, and a gate electrode formed on the high dielectric film.

Dependencies are inferred from the claim text.

Facts

Application

07/964,043Filed 21 Oct 1992

Priority

JP 3-28458530 Oct 1991

Granted

26 Jul 1994

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 30/69
Insulated-gate field-effect transistors [IGFET]: iGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 64/685
Having a compositional variation, e.g. multilayered: being perpendicular to the channel plane
H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates

Abstract

Facts

Application

07/964,043Filed 21 Oct 1992

Priority

JP 3-28458530 Oct 1991

Granted

26 Jul 1994

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 64/01342
On single crystalline silicon, e.g. chemical oxidation using a liquid: by deposition, e.g. evaporation, ALD or laser deposition
H10D 30/69
Insulated-gate field-effect transistors [IGFET]: iGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 64/685
Having a compositional variation, e.g. multilayered: being perpendicular to the channel plane
H10D 64/691
Characterised by the insulator, e.g. by the gate insulator: comprising metallic compounds, e.g. metal oxides or metal silicates

Semiconductor memory apparatus

Life of this patent

Abstract

Claims3

Semiconductor memory apparatus

Life of this patent

Abstract

Claims3