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AssigneeMax-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
InventorsKlaus von Klitzing, Gerhard Mueller, Edgar Diessel, Dieter Weiss
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A semiconductor radiation detector with layer-wise construction and a contive region having a two-dimensional or quasi one-dimensional electron or hole gas is provided in which adiabatic transport in edge channels occurs at least regionally and in which at least two contacts are provided to this conductive region. The transport in the edge channels is disturbed by interaction with the electromagnetic radiation to be detected, i.e. an increase of the scattering rate between the edge channels is caused. This leads to a change of the resistance measurable between the contacts, with a means being provided for measuring the change of resistance to thereby detect the incident radiation.
Semiconductor radiation detector having a layered construction and comprising a conductive region having a two-dimensional or quasi one-dimensional electron or hole gas in which an adiabatic transport takes place at least regionally in edge channels, and with at least two contacts to the conductive region, wherein the transport in the edge channels is disturbed by interaction with the electromagnetic radiation to be detected so that an increase of the scattering rate between the edge channels is caused to change the resistance measurable between the contacts, and means for detecting the change in resistance.
Semiconductor component for detecting electromagnetic radiation, comprising:
Semiconductor component for detecting electromagnetic radiation, comprising:
Dependencies are inferred from the claim text.