US 5,332,692 A · Method of manufacturing a semiconductor device having a polycide structure

Abstract

A sputtering technique is conducted within a sputtering device the inside of which is in the state of vacuum, whereby a second polycrystal silicon film (7) is deposited on a first polycrystal silicon film (3) on the surface of which a natural oxide film (4) exists. The inside of the sputtering device is maintained to be in the state of vacuum after the second polycrystal silicon film (7) is formed. With the same sputtering device, a metal silicide film (5) is deposited on the second polycrystal film under vacuum. When a silicon oxide film is formed on the silicide film, silicons to be oxidized are uniformly supplied through the silicide film. Therefore, the polycrystal silicon film and the silicide film are not separated from each other at the boundary face between them. Further, product yield rate is improved since it is not necessary to perform sputter etching.

Claims5

Dependent claims

A method of manufacturing a semiconductor device, comprising:

(i) preparing a semiconductor substrate;
(ii) forming a first polycrystal silicon film on said semiconductor substrate by a CVD technique;
(iii) forming a second polycrystal silicon film on said first polycrystal silicon film by a sputtering technique within a vacuum vessel;
and
(iv) forming a silicide film on said second polycrystal silicon film by a sputtering technique which is conducted within said vacuum vessel to be continuous with said step (iii);
to form a polycide structure composed of said first and second polycrystal silicon films and said silicide film.

3 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor device having a polycide structure

Life of this patent

Method of manufacturing a semiconductor device having a polycide structure

Life of this patent

Abstract

Claims5