Field emission type emitter and a method of manufacturing thereof

A field emission type emitter comprising:

• a conductive substrate;
• an insulating film formed on the conductive substrate;
• a cavity formed in the insulating film;
• a cathode formed on the conductive substrate in the cavity;
• and
• a gate electrode formed over the insulating film in the portion of the cavity so as to have an inverse tapered shape such that said cavity is wider at the bottom adjacent said substrate than at the top, wherein the gate electrode is formed of a refractory metal silicide.

A field emission type emitter comprising:

• a glass substrate;
• a first insulating film formed on the glass substrate;
• a conductive film formed on the first insulating film;
• a second insulating film formed on the conductive film and the first insulating film;
• a cavity formed in the second insulating film;
• a cathode formed on the conductive film in the cavity;
• a gate electrode formed over the second insulating film;
• and wherein said gate electrode is selected from the group comprising tungsten silicide (WSi.sub.x) and molybdenum silicide (Mo Si.sub.x).