Epitaxially grown compound-semiconductor crystal
AssigneeSumitomo Chemical Company, Limited
InventorsMasahiko Hata, Noboru Fukuhara, Takayoshi Maeda
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Abstract
An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer layer comprises (A) a high-resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.
Claims17
An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on said substrate, and an active layer formed on said buffer layer, said buffer layer comprising (A) a high-resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.
An epitaxially grown compound-semiconductor crystal for a field-effect transistor, which comprises a GaAs substrate having consecutively thereon an undoped GaAs layer;
- a high-resistivity AlGaAs or AlGaInP layer (A) doped with oxygen or/and a transition metal;
- a high-purity GaAs, InGaP, or AlGaAs layer (B);
- and an n-type GaAs or n-type InGaP active layer.
Dependencies are inferred from the claim text.