Vertical cavity surface emitting laser and sensor
AssigneeMotorola, Inc.
InventorsChan-Long Shieh, Donald E. Ackley
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Abstract
A vertical cavity surface emitting laser (VCSEL) having sensing capabilities is fabricated by forming a layer having the capability to change the threshold current of the VCSEL. This can be accomplished by forming a deformable membrane or a cantilevered beam on the VCSEL. The deformation of movement of the beam causes a change in the threshold current of the VCSEL, so that it can go from lasing to nonlasing or vice versa. In addition, a layer which changes reflectivity in the presence of a particular chemical can also be formed on the VCSEL to produce the same result.
Claims27
A semiconductor laser operating at a particular wavelength and having a threshold current, comprising:
- a semiconductor supporting structure;
- a first mirror stack positioned above said supporting structure;
- an active layer comprised of at least one light emitting region positioned above said first mirror stack;
- a second mirror stack positioned above said active layer;
- and
- a means for changing said threshold current of said semiconductor laser upon sensing a change in an environment positioned above said second mirror stack.
A semiconductor laser, operating at a particular wavelength and having a threshold current, comprising:
- a semiconductor supporting structure;
- a first mirror stack positioned above said supporting structure;
- an active layer comprised of at least one light emitting region positioned above said first mirror stack;
- a second mirror stack positioned above said active layer;
- and
- a first layer positioned above said second mirror stack which is capable of changing said threshold current of said semiconductor laser upon a change in an environment.
A method of fabricating a semiconductor laser, operating at a particular wavelength and having a threshold current, comprising the steps of:
- providing a semiconductor supporting structure;
- forming a first mirror stack positioned above said supporting structure;
- forming an active layer comprised of at least one light emitting region positioned above said first mirror stack;
- forming a second mirror stack positioned above said active layer;
- and
- forming a means for changing said threshold current of said semiconductor laser upon sensing a change in an environment positioned above said second mirror stack.
Dependencies are inferred from the claim text.