High-power semiconductor laser device

Abstract

A high-power semiconductor laser device includes a semiconductor substrate of a first type, a first clad layer of a first type formed on the semiconductor substrate, an active layer of a second type and a clad layer of a second type sequentially stacked on the center of the first clad layer, and a current-blocking layer formed on the first clad layer and covering the whole surface of the active and second clad layers. Thus, crystal growth of a mirror facet is performed along with the formation of the current-blocking layer, thereby decreasing the number of process steps. Also, a II-VI group compound semiconductor having excellent electrical and optical characteristics is employed both on the mirror facet and in the current-blocking layer, so that optical absorption is prevented, which thus enhances the reliability and realizes the high-power operation of the semiconductor laser device.

Dependencies are inferred from the claim text.