Dynamically switchable reference voltage generator
AssigneeSGS-Thomson Microelectronics S.A.
InventorEmilio Yero
Life of this patent
Estimating the term…
Abstract
An integrated circuit memory which includes a subcircuit for generating a programmable reference voltages on-chip from an external high-voltage supply line. Depending on the mode of operation (test, read, write, etc.), the reference voltage is changed.
Claims33
An integrated circuit, comprising:
- first and second power-supply connections;
- first, second, and third mutually matched field-effect transistors of a first channel conductivity type;
- at least one bias network, connected to provide three different constant bias voltages to the three respective gates of said transistors;
- said first transistor being operatively connected between said second transistor and said first power-supply connection;
- said second transistor, and a respective switch in series therewith, being operatively connected between said first transistor and said second power-supply connection;
- said third transistor, and a respective switch in series therewith, being operatively connected between said first transistor and said second power-supply connection;
- and
- logic connected to control both said switches, and to turn on no more than one thereof;
- whereby the potential intermediate said first and second transistors provides a reference voltage which is dependent on the state of said switches, but is otherwise substantially constant.
An integrated circuit, comprising:
- first and second power-supply connections;
- first, second, and third mutually matched field-effect transistors of a first channel conductivity type;
- at least one resistive bias network, connected to first and second power-supply connections, and configured to generate first, second, and third different respective constant bias voltages therefrom, and to provide said three bias voltages to gates of said three matched field-effect transistors;
- said first transistor having a source operatively connected to a first power-supply connection;
- said second transistor, and a respective switch in series therewith, being operatively connected, in series with said first transistor, between said first and second power-supply connections;
- said third transistor, and a respective switch in series therewith, also being operatively connected, in series with said first transistor, between said first and second power-supply connections;
- logic connected to control both said switches, and to turn on no more than one thereof;
- whereby the potential intermediate said first and second transistors provides a reference voltage which is dependent on the state of said switches, but is otherwise substantially constant.
An integrated circuit, comprising:
- first and second power-supply connections;
- first, second, and third mutually matched field-effect transistors of a first channel conductivity type;
- at least one bias network, connected to provide three different constant bias voltages to the three respective gates of said transistors;
- said first transistor having a source operatively connected to said first power-supply connection;
- said second transistor, and a respective switch in series therewith, being operatively connected, in series with said first transistor, between said first and second power-supply connections;
- said third transistor, and a respective switch in series therewith, also being operatively connected, in series with said first transistor, between said first and second power-supply connections;
- logic connected to control both said switches, and to turn on no more than one thereof;
- whereby the potential intermediate said first and second transistors provides a reference voltage which is dependent on the state of said switches, but is otherwise substantially constant.
An integrated circuit, comprising:
- a positive power-supply connection, and a ground connection;
- first, second, and third P-channel field-effect transistors, all having substantially identical geometries;
- at least one bias network, connected to provide three different constant bias voltages to the three respective gates of said transistors;
- said first transistor having a source operatively connected to said power-supply connection;
- said second transistor, and a respective switch in series therewith, being operatively connected, in series with said first transistor, between said power-supply connection and ground;
- at least one regulating transistor being interposed between said first and second matched transistors;
- said third transistor, and a respective switch in series therewith, also being operatively connected, in series with said first transistor, between said power-supply connection and ground;
- logic connected to control both said switches, and to turn on no more than one thereof;
- an N-channel output transistor connected to be controlled by a node intermediate between the channels of said first and second transistors, and accordingly to pass current from said power-supply connection to a load terminal;
- an additional series-connected pair of field-effect transistors, jointly connected in parallel with said output transistor, and including
- an additional P-channel transistor having a gate connected to the gate of said first matched transistor, and also
- an additional N-channel transistor having a gate connected to the gate of said regulating transistor;
- whereby the potential intermediate said first and second transistors provides a reference voltage which is dependent on the state of said switches, but is otherwise substantially constant.
A circuit for the generation of reference voltages, comprising:
- a first transistor placed between a positive voltage source and an output node, and having its gate biased at a first voltage;
- one second transistor and one third transistor connected in parallel, each being identical to said first transistor, each having its gate biased at a different respective voltage and being mounted in series with a respective switching transistor between said output node and ground;
- a sequence of resistors in series between the positive voltage source and the ground to deliver different bias voltages to the gates of said first, second, and transistors;
- logic connected and configured to make only one said switching transistor conductive at a time to generate a determined level at the output of the generation stage.
An integrated circuit memory, comprising:
- an array of memory cells;
- and peripheral circuitry, including
- address decode logic connected to receive address bits and to access a correspondingly one of said cells;
- and
- control logic connected to receive one or more control bits and to select a mode of operation of said peripheral circuitry accordingly;
- reference-voltage-generating circuit, connected to receive an external voltage supply, and connected to receive bits from said control logic indicating a mode of operation, and to supply at least one reference voltage to said peripheral circuitry in dependence on said bits from said control logic;
- said reference-voltage-generating circuit comprising
- first, second, and third mutually matched field-effect transistors of a first channel conductivity type;
- at least one bias network, connected to provide three different constant bias voltages to the three respective gates of said transistors;
- said first transistor being operatively connected between said second transistor and said first power-supply connection;
- said second transistor, and a respective switch in series therewith, being operatively connected between said first transistor and said second power-supply connection;
- said third transistor, and a respective switch in series therewith, being operatively connected between said first transistor and said second power-supply connection;
- and
- logic connected to control both said switches, and to turn on no more than one thereof, in accordance with bits received from said control logic.
A method for generating multiple reference voltages on-chip from a single voltage externally supplied between first and second power-supply connections comprising the steps of:
- using a voltage-dividing ladder between the first and second power-supply connections to generate three different substantially constant bias voltages to the respective gates of first, second, and third mutually matched field-effect transistors of a first channel conductivity type;
- said first transistor being operatively connected between the second transistor and the first power-supply connection;
- selectably, when a first reference voltage is desired, connecting said second transistor, but not said third transistor, between said first transistor and the second power-supply connection;
- and
- selectably, when a second reference voltage is desired, connecting said third transistor, but not said second transistor, between said first transistor and the second power-supply connection;
- and
- connecting a node between said first and second transistors to provide a reference voltage which is substantially constant.
Dependencies are inferred from the claim text.