High density interconnect structure including a chamber
AssigneeGeneral Electric Company
InventorsRobert J. Wojnarowski, Charles W. Eichelberger, William P. Kornrumpf
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Abstract
A high density interconnect structure is rendered suitable for the packaging of overlay sensitive chips by providing a cavity in the high density interconnect structure which spaces the sensitive surface of such chips from the overlying high density interconnect structure in a manner which prevents undesired interactions between the dielectric of the high density interconnect structure and the chip.
Claims20
In a high density interconnected system including at least one electronic chip having an upper surface defining a plane, a high density interconnect (HDI) structure including a first dielectric layer of dielectric material bonded to said chip and a first pattern of HDI conductors disposed on or in said dielectric material, the conductors of said HDI interconnect structure electrically connected to said electronic chip, the improvement comprising:
- said HDI structure including an overlying layer overlying said chip, said overlying layer spanning said chip and being spaced from said upper surface of said chip whereby a portion of said overlying layer comprises a ceiling of a chamber which is disposed between said chip and said overlying layer, said overlying layer defining a plane;
- said first dielectric layer of said HDI structure including a portion disposed at an angle to the plane of said overlying layer and extending from said overlying layer to said upper surface of said chip, said first dielectric layer of the HDI structure being bonded to both said overlying layer and to said upper surface of said chip;
- said first pattern of HDI conductors being disposed on said first dielectric layer of said HDI structure and including conductors which extend from an ohmic contact with a contact pad of said chip to said overlying layer;
- said overlying layer comprising (a) a second dielectric layer of said HDI structure;
- and (b) a second pattern of HDI conductors disposed on said second dielectric layer, at least some conductors of said second pattern of conductors being ohmically connected to conductors of said first pattern of conductors.
Dependencies are inferred from the claim text.