Method of fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakehito Yoshida, Shinichi Ogawa
Life of this patent
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Abstract
A method of fabricating a semiconductor device wherein after forming a titanium silicide thin film on a silicon substrate, dopant impurities are implanted into the silicon substrate through the titanium silicide thin film so as to form shallow p.sup.+ -n junctions in the silicon substrate. At least one of the following conditions (1) to (3) is satisfied: (1) forty to seventy percent of the total implant dose is within the n-type silicon substrate; (2) the projected range is set at the depth corresponding to 90% to 125% of the titanium silicide film thickness; and (3) the dopant dose that comes to rest within the n-type silicon substrate is in the range of 2.0.times.10.sup.15 /cm.sup.2 to 3.5.times.10.sup.15 /cm.sup.2.
Claims16
A method of fabricating a semiconductor device, comprising the steps
- forming a titanium silicide film on semiconductor substrate;
- implanting dopant ions into said titanium silicide film and said semiconductor substrate;
- and
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming p-n junctions in said semiconductor substrate;
- and
- wherein a fraction of said dopant tons implanted into said semiconductor substrate ranges from 40 percent to 70 percent of a total dose of said dopant ions implanted into said titanium silicide film and said semiconductor substrate.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a titanium silicide film on a surface of a semiconductor substrate;
- implanting dopant ions into said titanium silicide film and said semiconductor substrate;
- and
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming p-n junctions in said semiconductor substrate;
- and
- wherein a projected range of said dopant ions ranges from 90 percent to 125 percent of a thickness of said titanium silicide film.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a device isolation film on a semiconductor substrate, said device isolation film having a pattern for exposing active regions of said semiconductor substrate;
- forming gate lines so as to cover a portion of said active regions of said semiconductor substrate;
- forming a titanium silicide film on said active regions of said semiconductor substrate in self-alignment with said gate lines;
- implanting dopant ions into said titanium silicide film and said active regions of said semiconductor substrate;
- and
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming source and drain regions of a transistor in said semiconductor substrate;
- and
- wherein a fraction of said dopant ions implanted into said semiconductor substrate ranges from 40 percent to 70 percent of a total dose of said dopant ions implanted into said titanium silicide film and said semiconductor substrate.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a device isolation film on a semiconductor substrate, said device isolation film having a pattern for exposing active regions of said semiconductor substrate;
- forming gate lines so as to cover a portion of said active regions of said semiconductor substrate;
- forming a titanium silicide film on said active regions of said semiconductor substrate in self-alignment with said gate lines;
- implanting dopant ions into said titanium silicide film and said active regions of said semiconductor substrate;
- and
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming source and drain regions of a transistor in said semiconductor substrate;
- and
- wherein a projected range of said dopant ions ranges from 90 percent to 125 percent of a thickness of said titanium silicide film.
A method for fabricating a semiconductor device, comprising the steps of;
- forming a titanium silicide film on a surface of a semiconductor substrate;
- implanting dopant ions into said titanium silicide film and said semiconductor substrate, said dopant ions being boron ions;
- and
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming p.sup.+ -n junctions in said semiconductor substrate;
- and
- wherein a fraction of said dopant ions implanted into said semiconductor substrate ranges from 40 percent to 70 percent a total dose of said dopant ions implanted into said titanium silicide film and said semiconductor substrate.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a titanium silicide film on a surface of a semiconductor substrate;
- implanting dopant ions into said titanium silicide film and said semiconductor substrate, said dopant ions being boron ions;
- and
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming p.sup.+ -n junction in said semiconductor substrate;
- and
- wherein a projected range of said dopant ions ranges from 90 percent to 125 percent of a thickness of said titanium silicide film.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a device isolation film on a semiconductor substrate, said device isolation film having a pattern for exposing active regions of said semiconductor substrate;
- forming gate lines so as to cover a portion of said active regions of said semiconductor substrate;
- forming a titanium silicide film on said active regions of said semiconductor substrate in self-alignment with said gate lines;
- implanting dopant ions into said titanium silicide film and said active regions of said semiconductor substrate, said dopant ions being boron ions;
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming p.sup.+ -source and p.sup.+ -drain regions of a transistor in said semiconductor substrate;
- and
- wherein a fraction of said dopant ions implanted into said semiconductor substrate ranges from 40 percent to 70 percent of a total dose of said dopant ions implanted into said titanium silicide film and said semiconductor substrate.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a device isolation film on a semiconductor substrate, said device isolation film having a pattern for exposing active regions of said semiconductor substrate;
- forming gate lines so as to cover a portion of said active regions of said semiconductor substrate;
- forming a titanium silicide film on said active regions of said semiconductor substrate in self-alignment with said gate lines;
- implanting dopant ions into said titanium silicide film and said active regions of said semiconductor substrate, said dopant ions being boron ions;
- annealing said semiconductor substrate so as to activate said dopant ions, thereby forming p.sup.+ -source and p.sup.+ -drain regions of a transistor in said semiconductor substrate;
- and
- wherein a projected range of said dopant ions ranges from 90 percent to 125 percent of a thickness of said titanium silicide film.
Dependencies are inferred from the claim text.