Method for forming resist mask pattern by light exposure having a phase shifter pattern comprising convex forms in the resist
AssigneeSharp Kabushiki Kaisha
InventorsHiroki Tabuchi, Katsuji Iguchi, Makoto Tanigawa, Takayuki Taniguchi, Hiroyuki Moriwaki
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Abstract
A method for forming a resist mask pattern by light exposure providing the steps of forming a resist layer on a semiconductor substrate, forming a phase shifter pattern for inverting a phase of exposed light in an upper portion of the resist layer itself or over the surface of the resist layer, exposing the surface of the semiconductor substrate including the phase shifter pattern, and forming a fine mask pattern below the edge of the phase shifter pattern.
Claims8
A method for forming a resist pattern by light exposure comprising the steps of:
- i) forming a resist layer having an upper surface on a semiconductor substrate,
- ii) forming a phase shifter pattern for inverting the phase of exposure light, said phase shifter pattern comprising convex forms in an upper portion of the resist layer itself,
- iii) exposing the whole upper surface of the resulting resist layer including the phase shifter pattern to form unexposed portions positioned below and adjacent to side walls of the convex forms of the phase shifter pattern, and
- iv) developing the resist layer, thereby forming a desired resist pattern having a width shorter than a wavelength of the exposure light.
A method for forming a resist pattern by light exposure comprising the steps of:
- i) forming a resist layer on a semiconductor substrate,
- ii) forming a phase shifter pattern for inverting the phase of exposure light, said phase shifter pattern comprising convex forms, over the resist layer,
- iii) exposing the resist layer including the phase shifter pattern to form unexposed portions in the resist layer which are below and adjacent to side walls of the convex forms of the phase shifter pattern,
- iv) developing the resultant resist layer to form a desired resist pattern having a width shorter than a wavelength of the exposure light.
Dependencies are inferred from the claim text.