High impedance plasma ion implantation method and apparatus

A plasma ion implantation method, comprising:

• providing a target object within a plasma chamber,
• introducing an ionizable gas into the chamber, and
• applying a series of time-spaced negative voltage pulses to the target at a voltage level of at least about 50 kV to (a) induce a 3-dimensional beam of secondary electrons from the target that sustains a plasma in the gas through a beam-plasma instability interaction for at least a first portion of each pulse, and to (b) implant ions from the plasma into the target during at least a second portion of each pulse.

A plasma ion implantation method, comprising:

• providing a target object within a plasma chamber,
• introducing an ionizable gas into the chamber, and
• electrically energizing said target with an energization signal that undergoes a signal rise to (a) emit secondary electrons which forms a 3-dimensional beam that establishes a background plasma in said gas in the vicinity of the target through electron-gas collisions, and a primary pulsed plasma in the vicinity of the target through a beam-plasma instability interaction between said 3-dimensional secondary electron beam and said background plasma, and to (b) produce an implantation of ions from said primary plasma into said target, with said plasma experiencing a rise in density under said beam-plasma instability interaction, and said ion implantation experiencing a rise in implantation rate, that lag said signal rise.

A plasma ion implantation method, comprising:

• providing a target object within a plasma chamber,
• introducing an ionizable gas into the chamber, and
• electrically energizing said target is energized with negative voltage pulses of at least about 50 kV to (a) emit secondary electrons which forms a 3-dimensional beam that establishes a background plasma in said gas in the vicinity of the target through electron-gas collisions, and a primary pulsed plasma in the vicinity of the target through a beam-plasma instability interaction between said 3-dimensional secondary electron beam and said background plasma, and to (b) produce a pulsed implantation of ions from said primary plasma into said target.