Electric device provided with carbon pattern structure and manufacturing method for the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
An improved semiconductor device and manufacturing method for the same is described. The device is provided with an interleaved carbon pattern. The heat produced in the semi conductor device can be quickly dissipated and the undesirable temperature elevation can be prevented due to the low thermal conductivity of the carbon pattern.
Claims27
A method of producing patterns mainly made of carbon comprising:
- forming an amorphous or diamond-like carbon film having SP.sup.3 carbon bonds on a substrate;
- covering said carbon film with a mask made of a material resistant to an oxygen containing etchant in accordance with a prescribed pattern;
- and
- carrying out a chemical vapor etching reaction by virtue of an electric power using said oxygen containing etchant.
A method of forming a passivation film comprising an amorphous or diamond-like carbon film on an electronic device comprising the steps of:
- forming an amorphous or diamond-like carbon film having SP.sup.3 carbon bonds by a CVD method on a substrate having at least one terminal;
- forming a mask on a part of said carbon film;
- exposing said carbon film in an etchant gas comprising an oxygen containing material;
- supplying energy to said etchant gas in order to activate said gas;
- and
- selectively etching said carbon film other than covered with said mask so that said at least one terminal is uncovered with said carbon film.
A method of forming a protective coating comprising amorphous or diamond-like carbon on an electronic device comprising:
- forming an amorphous or diamond-like carbon film having SP.sup.3 carbon bonds on a substrate having at least one terminal;
- covering said carbon film with a mask;
- and
- selectively etching said carbon film in accordance with said mask in order to expose said at least one terminal.
A method of forming a passivation film comprising an amorphous or diamond-like carbon film on an electronic device comprising the steps of:
- forming an amorphous or diamond-like carbon film having SP.sup.3 carbon bonds on an electronic device;
- forming a mask on a part of said carbon film;
- exposing said carbon film in an etchant gas selected from the group consisting of NO.sub.2, NO, and N.sub.2 O;
- supplying energy to said etchant gas in order to activate said gas;
- and
- selectively etching said carbon film other than covered with said mask.
a method of forming a passivation film comprising an amorphous or diamond-like carbon film on an electronic device comprising the steps of:
- forming an amorphous or diamond-like carbon film having SP.sup.3 carbon bonds on an electronic device;
- forming a mask on a part of said carbon film, said mask comprising a material selected from the group consisting of silicon oxide, silicon nitride and a metal;
- exposing said carbon film in an etchant gas containing at least oxygen;
- supplying said energy to said etchant gas in order to activate said gas;
- and
- selecting etching said carbon film other than covered with said mask.
Dependencies are inferred from the claim text.