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US 5,330,615 AGranted
Symmetric double water plasma etching system
OwnerCheng Chuinventor
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Abstract
The present invention teaches a method to produce and construct a symmetric double wafer parallel plate RF plasma etching system. In such a symmetric system, maximum voltage difference between the electrodes and minimum voltage differences between the individual electrodes and reactor vessel are easily achieved. Two wafers can be etched in a single discharge and efficiency may be increased considerably when compared with single wafer systems.
Claims1
A method for symmetrically plasma etching two semiconductor wafers comprising the steps of:
- symmetrically placing two wafers on two planar electrodes in an etching chamber maintaining at a chamber reference voltage;
- injecting an etching gas into said etching chamber;
- and
- applying an RF voltage to said two electrodes to provide to said two electrodes two corresponding symmetrical 180 degree out-of-phase voltages of substantially equal magnitude relative to said chamber reference voltage whereby said etching gas is ionized and said etching method produce a minimal stray electrical discharge.
1 more element
Dependencies are inferred from the claim text.