Manufacturing method of a capacitor having a storage electrode whose sidewall is positively inclined with respect to the horizontal surface
AssigneeSamsung Electronics Co., Ltd.
InventorJi-hong Ahn
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Abstract
Disclosed are a semiconductor memory device and method for manufacturing the same. The method includes a process for manufacturing a capacitor performed by the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern composed of a 1st first-material layer on the first conductive layer, forming a first sidewall spacer composed of 1st second-material layer on the resultant structure, and etching the material layer under the first sidewall spacer, using the first sidewall spacer as an etch-mask. The semiconductor memory device thus manufactured can be highly integrated and is highly reliable.
Claims33
A method for manufacturing a semiconductor memory device including a process for manufacturing a capacitor comprising the steps of:
- forming a first conductive layer on a semiconductor substrate;
- forming a first pattern composed of a 1st first-material layer on said first conductive layer;
- etching said first conductive layer, using said first pattern composed of said 1st first-material layer as an etch-mask;
- removing said first pattern composed of said 1st first-material layer;
- forming a first sidewall spacer composed of 1st second-material layer on the resultant structure;
- and
- etching the material layer under said first sidewall spacer, using said first sidewall spacer as an etch-mask.
Dependencies are inferred from the claim text.